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Brown, Geoff

Publications and source records attributed to Brown, Geoff.

2 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Quantifying CTFE content in FK-800 using ATR-FTIR and time to peak crystallization

The chlorotrifluoroethylene (CTFE) content in vinylidene fluoride (VDF)-CTFE copolymers greatly influences the chemical and physical properties and ultimately determines the application. The copolymer known as FK-800 has a VDF:CTFE ratio of ~1:3 and is used almost exclusively as the binder in the insensitive high explosive (HE) formulation PBX 9502. Due to the dangerous nature of HE work and the effect CTFE content variations have, the ability to quickly and easily quantify CTFE content is of interest. Two techniques, attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) and time to peak crystallization measured by heat flow calorimetry, were evaluated here as potential means for quantifying CTFE content. Based on the certificate of analyses (COAs), FK-800 lots with varied CTFE content encompassing the range historically used in HE applications were used as standards for both methodologies. For FTIR, a linear regression was performed on the peak area of the C-Cl IR stretch and the CTFE content; the methodology was then demonstrated on four samples, two lots of unadulterated material and material recovered from two HE samples. The calculated CTFE content and COAs were in good agreement for all four samples. Heat flow calorimetry revealed the relationship between time to peak crystallization and CTFE content was best fit by a power regression; the methodology was then tested on two different FK-800 lots. Only one sample showed good agreement between the calculated CTFE content and the COA. This discrepancy indicates the method developed is not suitable for quantifying CTFE, but provides valuable insight regarding the crystallization behavior of VDF-CTFE copolymers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1998

Analysis of Phase Separation in Czochralski Grown Single Crystal Ilmenite

Ilmenite (FeTiOs) is a wide bandgap semiconductor with an energy gap of 2.58 eV. Ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Single crystal ilmenite has been grown from the melt using the Czochralski method. Growth conditions have a profound effect on the microstructure of the samples. Here we present data from a variety of analytical techniques which indicate that some grown crystals exhibit distinct phase separation during growth. This phase separation is apparent for both post-growth annealed and unannealed samples. Under optical microscopy, there appear two distinct areas forming a matrix with an array of dots on order of 5 pm diameter. While appearing bright in the optical micrograph, atomic force microscope (AFM) shows the dots to be shallow pits on the surface. Magnetic force microscope (MFM) shows the dots to be magnetic. Phase identification via electron microprobe analysis (EMPA) indicates two major phases in the unannealed samples and four in the annealed samples, where the dots appear to be almost pure iron. This is consistent with micrographs taken with a scanning probe microscope used in the magnetic force mode. Samples that do not exhibit the phase separation have little or no discernible magnetic structure detectable by the MFM.

Wilkins, R.↗