Engineering topics
Publications and source records attributed to Brown, Kristina K..
Presentation describes research program and goal to understand all large radiographic contributions for a given image and assess if quantitative predictions can be made once contributions are understood, with current focus understanding scintillator response.
There is growing interest in using low-energy flash x-ray sources in radiographic applications to provide high-contrast images of low-density objects. Due to the low-energy nature of the detected photons, thin bright scintillators are desired. In order to pursue an optimum radiographic system, experimental studies have been performed of the static imaging properties of thin microcolumnar CsI using a Platts x-ray source. The Platts source is a nominally 300 keV endpoint rod pinch diode x-ray source with a ~35 ns pulse time. The source was used to measure the imaging properties of microcolumnar CsI with various thicknesses and backings. The experimental setup was modeled in GEANT4, and the images were simulated to estimate system performance. Taking into account the source photon production, radiation transport, and system optical performance, an accurate assessment of the detection system can be deduced.
Presentation describes studies to develop capabilities for dynamic imaging of low-density objects using pulsed low-energy x-ray unit.
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Ultrafast scintillators are the subject of current research in an effort to better resolve ultrafast phenomena in high-energy density physics (HEDP) experiments. Despite extensive research on new scintillator materials, the essential mechanism of energy absorption, excitation, and photo-emission has remained unchanged for over 50 years. Recently, a new class of semiconductor detector has been developed utilizing the radoptic effect, or the change of refractive index when subjected to radiation, in an attempt to record events faster than conventional scintillators.1 This study was designed for the observation of the radoptic effect by optical interferometry in different semiconductors to experimentally determine the fastest and most sensitive materials for the optimization of current radsensors.
Ultrafast scintillators are the subject of current research in an effort to better resolve ultrafast phenomena in high-energy density physics (HEDP) experiments. Despite extensive research on new scintillator materials, the essential mechanism of energy absorption, excitation, and photo-emission has remained unchanged for over 50 years. Recently, a new class of semiconductor detector has been developed using the radoptic effect, or the change of refractive index when subjected to radiation, in an attempt to record events faster than conventional scintillators.1 This study was designed for the observation of the radoptic effect by optical interferometry in different semiconductors (InP, InP:S, GaN, and GaN:Mg) to experimentally determine the fastest and most sensitive materials for the optimization of current radsensors.