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Brucker, G. J.

Publications and source records attributed to Brucker, G. J..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

A Systematic Global Mapping of the Radiation Field at Aviation Altitudes

This paper presents early results from aircraft measurements made by a Low-LET Radiation Spectrometer (LoLRS), as part of a long-range effort to study the complex dynamics of the atmospheric radiation field. For this purpose, a comprehensive data base is being generated to enable a multivariable global mapping (and eventually modeling) of doses and Linear-Energy-Transfer (LET) spectra at aviation altitudes. To accomplish this, a methodical collection of data from the LoLRS (and other instruments), is planned over extended periods of time, in a manner that complements some previous isolated and sporadic measurements by other workers, with the objective to generate a detailed long-range description of the cosmic-ray induced particle environment and to study its variability and dependence on atmospheric thickness, magnetic latitude, L-shell or rigidity, space weather, solar particle events, solar cycle effects, magnetic field variation, diurnal and seasonal effects, and atmospheric weather. Analysis of initial data indicates that the dose is rising with increasing altitude and increasing magnetic latitude. Comparison of total doses with predictions is in good agreement.

Stassinopoulos, E. G.↗
NASA NTRS2002

A Low LET Radiation Spectrometer for Measuring Particle Doses in Space and Aircraft

This paper presents experimental data that demonstrates the feasibility of fabricating a miniature nuclear particle dosimeter for monitoring doses in aircraft and satellites. The basic instrument is a Low Linear-Energy-Transfer (LET) Radiation Spectrometer (LoLRS) that is designed to measure the energy deposited by particles with low LET values. The heart of the instrument is a Silicon-Lithium Drifted Diode (SLDD). Test results show that the LoLRS can be used to monitor the radiation threat to personnel in flights of space- and aircraft and also to generate a comprehensive data base from aviation and satellite measurements that can contribute to the formulation of more accurate environmental radiation models for dose predictions with reduced uncertainty factors.

Stassinopoulos, E. G.↗
NASA NTRS1998

Miniature High-Let Radiation Spectrometer for Space and Avionics Applications

This paper reports on the design and characterization of a small, low power, and low weight instrument, a High-LET Radiation Spectrometer (HiLRS), that measures energy deposited by heavy ions in microelectronic devices. The HILRS operates on pulse-height analysis principles and is designed for space and avionics applications. The detector component in the instrument is based on large scale arrays of p-n junctions. In this system, the pulse amplitude from a particle hit is directly proportional to the particle LET. A prototype flight unit has been fabricated and calibrated using several heavy ions with varying LETs and protons with several energies. The unit has been delivered to the Ballistic Missile Defense Organization (BMDO) c/o the Air Force Research Laboratory in Albuquerque, NM, for integration into the military Space Technology Research Vehicle (STRV), a US-UK cooperative mission. Another version of HILRS is being prepared for delivery in April to the Hubble Space Telescope (HST) project, to fly on the HST Orbital Systems Test (HOST) Platform on a shuttle mission.

Stassinopoulos, E. G.↗
NASA NTRS1996

Analysis of space radiation data of semiconductor memories

This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.

Flight Experiment↗
NASA NTRS1993

CRRES microelectronics package flight data analysis

A detailed in-depth analysis was performed on the data from some of the CRRES MEP (Microelectronics Package) devices. These space flight measurements covered a period of about fourteen months of mission lifetime. Several types of invalid data were identified and corrections were made. Other problems were noted and adjustments applied, as necessary. Particularly important and surprising were observations of abnormal device behavior in many parts that could neither be explained nor correlated to causative events. Also, contrary to prevailing theory, proton effects appeared to be far more significant and numerous than cosmic ray effects. Another unexpected result was the realization that only nine out of thirty-two p-MOS dosimeters on the MEP indicated a valid operation. Comments, conclusions, and recommendations are given.

Stassinopoulos, E. G.↗
NASA NTRS1992

Charge collection at large angles of incidence

Charge collection exhibited by p-n junctions, which have at least one small dimension, deviates from the geometric assumptions commonly used in SEU (single event upset) testing. The amount of charge collected did not increase with the secant of the angle of incidence. The number of events under the peak in the charge collection spectrum did not decrease as the cosine of the angle of incidence. Both the position of the peak and the number of events under the peak measured at a given angle of incidence depended upon which symmetry axis of the device was chosen to be the axis of rotation.

Mcnulty, P. J.↗
NASA NTRS1992

Charge generation by heavy ions in power MOSFETs, burnout space predictions, and dynamic SEB sensitivity

The transport, energy loss, and charge production of heavy ions in the sensitive regions of IRF 150 power MOSFETs are described. The dependence and variation of transport parameters with ion type and energy relative to the requirements for single event burnout in this part type are discussed. Test data taken with this power MOSFET are used together with analyses by means of a computer code of the ion energy loss and charge production in the device to establish criteria for burnout and parameters for space predictions. These parameters are then used in an application to predict burnout rates in a geostationary orbit for power converters operating in a dynamic mode. Comparisons of rates for different geometries in simulating SEU (single event upset) sensitive volumes are presented.

Stassinopoulos, E. G.↗
NASA NTRS1992

Shortcomings in ground testing, environment simulations, and performance predictions for space applications

This paper addresses the issues involved in radiation testing of devices and subsystems to obtain the data that are required to predict the performance and survivability of satellite systems for extended missions in space. The problems associated with space environmental simulations, or the lack thereof, in experiments intended to produce information to describe the degradation and behavior of parts and systems are discussed. Several types of radiation effects in semiconductor components are presented, as for example: ionization dose effects, heavy ion and proton induced Single Event Upsets (SEUs), and Single Event Transient Upsets (SETUs). Examples and illustrations of data relating to these ground testing issues are provided. The primary objective of this presentation is to alert the reader to the shortcomings, pitfalls, variabilities, and uncertainties in acquiring information to logically design electronic subsystems for use in satellites or space stations with long mission lifetimes, and to point out the weaknesses and deficiencies in the methods and procedures by which that information is obtained.

Stassinopoulos, E. G.↗
NASA NTRS1991

Transient SEUs in a fiber optic system for space applications

The results of an investigation on the SEU sensitivity for a fiber optic operating system are reported. Measurements were made on the upset cross sections for the system in static and dynamic modes of operation. The heavy ion SEU test facility at Brookhaven and the proton facility at Harvard University were used in this study. Cross sections were obtained for Honeywell transmitter and reciever devices operating in a system at a frequency of 100 kHz. Both devices were independently irradiated. The results show that the dynamic mode was the worst case, and the receiver was the most sensitive part type in the system. The threshold linear energy transfer (LET) for the receiver was determined to be 1.6 MeV sq cm/mg for the three input signals used in the tests, which were: a continuous high state, a low state, and a 100 kHz square wave.

Label, Ken↗
NASA NTRS1991

Prediction of error rates in dose-imprinted memories on board CRRES by two different methods

An analysis of the expected space radiation effects on the single event upset (SEU) properties of CMOS/bulk memories onboard the Combined Release and Radiation Effects Satellite (CRRES) is presented. Dose-imprint data from ground test irradiations of identical devices are applied to the predictions of cosmic-ray-induced space upset rates in the memories onboard the spacecraft. The calculations take into account the effect of total dose on the SEU sensitivity of the devices as the dose accumulates in orbit. Estimates of error rates, which involved an arbitrary selection of a single pair of threshold linear energy transfer (LET) and asymptotic cross-section values, were compared to the results of an integration over the cross-section curves versus LET. The integration gave lower upset rates than the use of the selected values of the SEU parameters. Since the integration approach is more accurate and eliminates the need for an arbitrary definition of threshold LET and asymptotic cross section, it is recommended for all error rate predictions where experimental sigma-versus-LET curves are available.

Brucker, G. J.↗
NASA NTRS1991

Multiple single event upsets in CMOS static rams

The occurrence of multiple upset errors during ground tests can contaminate the data and lead to error cross sections which are too high. In space, multiple errors may produce higher upsets than predicted and if they occur in single words they can defeat error detection and correction hardware. This investigation involves data which were taken during an experimental study of dose imprint effects in static memories. The results show that multiple errors occurred mainly for heavy ions with high linear energy transfers and with the majority of these in the soft upset sections of the dose-imprinted memory samples. The percentages of the total number of errors which were singles, doubles, and triplets, were determined as a function of LET, dose, and soft or hard section of the devices. The experimental observations are compared to the predictions of simple binomial statistics.

Stassinopoulos, E. G.↗
NASA NTRS1989

Variation in SEU sensitivity of dose-imprinted CMOS SRAMs

The authors report on an experimental study of dose-induced changes in SEU (single-event-upset) sensitivity of CMOS static RAMs. Two time regimes were investigated following exposure of memories to cobalt-60 gamma rays: the near term, within a few hours after exposure, and the long term, after many days. Samples were irradiated both at room and at liquid nitrogen temperatures. The latter procedure was used in order to freeze in the damage state until SEU measurements could be made prior to annealing. Results show that memories damaged by dose are more sensitive to upsets by heavy ions. The induced changes are substantial: threshold linear energy transfer (LET) values decreased by as much as 46 percent and asymptotic cross sections increased by factors of two to four (unannealed samples).

Stassinopoulos, E. G.↗
NASA NTRS1984

Total-dose and dose-rate dependence of proton damage in MOS devices during and after irradiation

Rad-hard CMOS/bulk inverters with input gates high and low were irradiated by protons with a nominal energy of 8 MeV in an effort to determine the total-dose and dose-rate dependence of threshold voltage shifts, both during and immediately after irradiation and over extended periods of time thereafter. It is shown that the effects in rad-hard MOS devices which are produced by specific proton and electron energies in the space environment could be simulated by cobalt-60 induced effects through careful and proper selection of total does and dose rates. This selection must be based on an experimentally established relationship of Co-60 to electron or proton damage. It is demonstrated that the simulation can be accomplished both during and after irradiation, in the long-term postirradiation period, as well as in the damage state immediately after bombardment.

Stassinopoulos, E. G.↗
NASA NTRS1983

Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

Brucker, G. J.↗
NASA NTRS1983

The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

Stassinopoulos, E. G.↗