Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices.
Electron mobility and lifetime variations effects on drift field in silicon junction devices
FIELD EFFECT TRANSISTOR /FET/↗
Engineering topics
Bullis, W. M.
Publications and source records attributed to Bullis, W. M..
The study of the epitaxial parameters on reliability of silicon planar devices technical summary report, 25 jun. 1964 - 25 jun. 1965
Effect of varying epitaxial deposition parameters on reliability of silicon planar solid state devices
RELIABILITY↗