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Burch, K. S.

Publications and source records attributed to Burch, K. S..

Evidence for Helical Hinge Zero Modes in an Fe-Based Superconductor

Combining topology and superconductivity provides a powerful tool for investigating fundamental physics as well as a route to fault-tolerant quantum computing. There is mounting evidence that the Fe-based superconductor FeTe 0.55 Se 0.45 (FTS) may also be topologically nontrivial. Should the superconducting order be s ± , then FTS could be a higher order topological superconductor with helical hinge zero modes (HHZMs). To test the presence of these modes, we have fabricated normal-metal/superconductor junctions on different surfaces via 2D atomic crystal heterostructures. As expected, junctions in contact with the hinge reveal a sharp zero bias anomaly that is absent when tunneling purely into the c-axis. Additionally, the shape and suppression with temperature are consistent with highly coherent modes along the hinge and are incongruous with other origins of zero bias anomalies. Additional measurements with soft-point contacts in bulk samples with various Fe interstitial contents demonstrate the intrinsic nature of the observed mode. Thus, we provide evidence that FTS is indeed a higher order topological superconductor.

2D superconductor↗

Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the Vertical Bridgeman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Low vibration high numerical aperture automated variable temperature Raman microscope

Raman micro-spectroscopy is well suited for studying a variety of properties and has been applied to wide- ranging areas. Combined with tuneable temperature, Raman spectra can offer even more insights into the properties of materials. However, previous designs of variable temperature Raman microscopes have made it extremely challenging to measure samples with low signal levels due to thermal and positional instability as well as low collection efficiencies. Thus, contemporary Raman microscope has found limited applicability to probing the subtle physics involved in phase transitions and hysteresis. This paper describes a new design of a closed-cycle, Raman microscope with full polarization rotation. High collection efficiency, thermal and mechanical stability are ensured by both deliberate optical, cryogenic, and mechanical design. Measurements on two samples, Bi 2 Se 3 and V 2 O 3 , which are known as challenging due to low thermal conductivities, low signal levels and/or hysteretic effects, are measured with previously undemonstrated temperature resolution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗