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Burch, Matthew J.

Publications and source records attributed to Burch, Matthew J..

11 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Implications of gnomonic distortion on electron backscatter diffraction and transmission Kikuchi diffraction

The effect of gnomonic distortion on orientation indexing of electron backscatter diffraction patterns is explored through simulation of electron diffraction patterns for sample-to-detector geometries associated with transmission Kikuchi diffraction (TKD) and electron backscatter diffraction (EBSD). Simulated data were analysed by computing a similarity index for both Hough transformed data and simulated patterns to determine the sensitivity of each method for detecting subtle differences in the effect of gnomonic distortions on electron diffraction patterns. These results indicate that the increased gnomonic distortions in electron diffraction patterns for a TKD geometry enhance the sensitivity for detecting subtle differences in interband angles. Additionally, the utilisation of a Hough transform-based indexing approach further enhances the sensitivity.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Direct Write of 3D Nanoscale Mesh Objects with Platinum Precursor via Focused Helium Ion Beam Induced Deposition

The next generation optical, electronic, biological, and sensing devices as well as platforms will inevitably extend their architecture into the 3rd dimension to enhance functionality. In focused ion beam induced deposition (FIBID), a helium gas field ion source can be used with an organometallic precursor gas to fabricate nanoscale structures in 3D with high-precision and smaller critical dimensions than focused electron beam induced deposition (FEBID), traditional liquid metal source FIBID, or other additive manufacturing technology. In this work, we report the effect of beam current, dwell time, and pixel pitch on the resultant segment and angle growth for nanoscale 3D mesh objects. We note subtle beam heating effects, which impact the segment angle and the feature size. Additionally, we investigate the competition of material deposition and sputtering during the 3D FIBID process, with helium ion microscopy experiments and Monte Carlo simulations. Our results show complex 3D mesh structures measuring ~300 nm in the largest dimension, with individual features as small as 16 nm at full width half maximum (FWHM). These assemblies can be completed in minutes, with the underlying fabrication technology compatible with existing lithographic techniques, suggesting a higher-throughput pathway to integrating FIBID with established nanofabrication techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Molecular reorganization in bulk bottlebrush polymers: direct observation via nanoscale imaging

Bottlebrush polymers are important for a variety of applications ranging from drug delivery to electronics. The functional flexibility of the branched sidechains has unique assembly properties when compared to linear block polymer systems. However, reports of direct observation of molecular reorganization have been sparse. This information is necessary to enhance the understanding of the structure–property relationships in these systems and yield a rational design approach for novel polymeric materials. In this work, we report direct visualization of bottlebrush molecular organization and the formation of nematic-type ordering in an amorphous polymer bottlebrush system, captured with plasma etching and helium ion microscopy. By observing the unperturbed structure of this material at high resolution and quantifying image features, we were able to qualitatively link experimental results with structures predicted by coarse-grained molecular dynamics simulations. Here, the direct visualization and computation workflow developed in this work can be applied to a broad variety of polymers with different architectures, linking imaging results with other, independent channels of information for better understanding and control of these classes of materials.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Chemical Phenomena of Atomic Force Microscopy Scanning

Atomic force microscopy is widely used for nanoscale characterization of materials by scientists worldwide. The long-held belief of ambient AFM is that the tip is generally chemically inert but can be functionalized with respect to the studied sample. This implies that basic imaging and scanning procedures do not affect surface and bulk chemistry of the studied sample. However, an in-depth study of the confined chemical processes taking place at the tip–surface junction and the associated chemical changes to the material surface have been missing as of now. Here, we used a hybrid system that combines time-of-flight secondary ion mass spectrometry with an atomic force microscopy to investigate the chemical interactions that take place at the tip–surface junction. Investigations showed that even basic contact mode AFM scanning is able to modify the surface of the studied sample. In particular, we found that the silicone oils deposited from the AFM tip into the scanned regions and spread to distances exceeding 15 μm from the tip. These oils were determined to come from standard gel boxes used for the storage of the tips. In conclusion, the explored phenomena are important for interpreting and understanding results of AFM mechanical and electrical studies relying on the state of the tip–surface junction.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Helium Ion Microscopy for Imaging and Quantifying Porosity at the Nanoscale

Nanoporous materials are essential components in a vast number of applications from energy to drug delivery and to agriculture. Yet, the number of ways to analytically quantify the salient features of these materials, for example: surface structure, pore shape, and size, remain limited. The most common approach is gas absorption, where volumetric gas absorption and desorption are measured. This technique has some fundamental drawbacks such as low sample throughput and a lack of direct surface visualization. In this work, we demonstrate Helium Ion Microscopy (HIM) as a tool for imaging and quantification of pores in industrially relevant SiO 2 catalyst supports. We start with the fundamental principles of ion-sample interaction, and build on this knowledge to experimentally observe and quantify surface pores by using the HIM and image data analytics. We contrast our experimental results to gas absorption and demonstrate full statistical agreement between two techniques. The principles surrounding the theoretical, experimental, and analytical framework presented herein offer an automated framework for visualization and quantification of pore structures in a wide variety of materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam

Transitioning to multi-material systems as either interfaced 2D materials or 3D heterostructures can lead to the next generation multi-functional device architectures. Combined direct physical and chemical nanoscale control of these systems offers a new way to tailor material and device functionality as functional structures reach their physical limit. Transition metal thiophosphate (TPS), Cu 1-x In 1+x/3 P 2 S 6 , that have ferroelectric polarization behavior as layered crystals at room temperature and above make them attractive candidates for direct material sculpting of both chemical and functional properties. The bulk material exhibits stable ferroelectric polarization corroborated by domain structures, rewritable polarization, and hysteresis loops. Our previous studies have demonstrated that ferroic order persists on the surface and that spinoidal decomposition of ferroelectric and paraelectric phases occurs in non-stoichiometric Cu/In ratio formulations. Here, we elucidate the chemical changes induced through helium ion irradiation in the TPS family library with varying Cu/In ratio formulations using correlated AFM and ToF-SIMS imaging. We correlate nano- and micro- structures that scale, in area and volume, to the total dose of the helium ion beam, as well as the overall copper concentration in the sample. Furthermore, our ToF-SIMS results show that ion irradiation leads to oxygen penetration as a function of Cu concentration, and proceeds along the Cu domains to the stopping distance of the helium ions in the TPS material. These results opens up new opportunities to understand and implement ferroicly coupled van der Waal devices into an existing framework of 2D heterostructures by locally tuning material chemistry and functionality.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Noble gas ion beams in materials science for future applications and devices

Helium ion microscopy (HIM), enabled by a gas field ion source (GFIS), is an emerging imaging and nanofabrication technique compatible with many applications in materials science. The scanning electron microscope (SEM) has become ubiquitous in materials science for high-resolution imaging of materials. However, due to the fundamental limitation in focusing of electron beams, ion-beam microscopy is now being developed (e.g., at 20 kV the SEM beam diameter ranges from 0.5 to 1 nm, whereas the HIM offers 0.35 nm). The key technological advantage of the HIM is in its multipurpose design that excels in a variety of disciplines. The HIM offers higher resolution than the best available SEMs as well as the traditional gallium liquid-metal ion source (LMISs) focused ion beams (FIBs), and is capable of imaging untreated biological or other insulating samples with unprecedented resolution, depth of field, materials contrast, and image quality. GFIS FIBs also offer a direct path to defect engineering via ion implantation, three-dimensional direct write using gaseous and liquid precursors, and chemical-imaging options with secondary ion mass spectrometry. HIM covers a wide range of tasks that otherwise would require multiple tools or specialized sample preparation. In this paper, we describe the underlying technology, present materials, relevant applications, and offer an outlook for the potential of FIB technology in processing materials.

2D materials↗
DOE OSTI2017

Engineering the thermal conductivity along an individual silicon nanowire by selective helium ion irradiation

The ability to engineer the thermal conductivity of materials allows us to control the flow of heat and derive novel functionalities such as thermal rectification, thermal switching and thermal cloaking. While this could be achieved by making use of composites and metamaterials at bulk length-scales, engineering the thermal conductivity at micro- and nano-scale dimensions is considerably more challenging. Here, we show that the local thermal conductivity along a single Si nanowire can be tuned to a desired value (between crystalline and amorphous limits) with high spatial resolution through selective helium ion irradiation with a well-controlled dose. The underlying mechanism is understood through molecular dynamics simulations and quantitative phonon-defect scattering rate analysis, where the behaviour of thermal conductivity with dose is attributed to the accumulation and agglomeration of scattering centres at lower doses. Finally, we observed threshold dose beyond a crystalline-amorphous transition.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Mapping 180° polar domains using electron backscatter diffraction and dynamical scattering simulations

A novel technique, which directly and nondestructively maps polar domains using electron backscatter diffraction (EBSD) is described and demonstrated. Through dynamical diffraction simulations and quantitative comparison to experimental EBSD patterns, the absolute orientation of a non-centrosymmetric crystal can be determined. With this information, the polar domains of a material can be mapped. The technique is demonstrated by mapping the non-ferroelastic, or 180°, ferroelectric domains in periodically poled LiNbO 3 single crystals. Furthermore, the authors demonstrate the possibility of mapping polarity using this technique in other polar materials system.

36 MATERIALS SCIENCE↗