Engineering topics

Burke, B. E.

Publications and source records attributed to Burke, B. E..

4 records

NASA NTRS2015

Scientific, Back-Illuminated CCD Development for the Transiting Exoplanet Survey Satellite

We describe the development of the fully depleted, back illuminated charge coupled devices for the Transiting Exoplanet Survey Satellite, which includes a set of four wide angle telescopes, each having a 2x2 array of CCDs. The devices are fabricated on the newly upgraded 200-mm wafer line at Lincoln Laboratory. We discuss methods used to produce the devices and present early performance results from the 100- micron thick, 15x15-microns, 2k x 4k pixel frame transfer CCDs.

quantum efficiency↗

NASA NTRS1995

Fabrication of large-area CCD detectors on high-purity, float-zone silicon

In this report on the fabrication of a 1024 x 1024 charge coupled device (CCD) imager to be used as a soft x-ray sensor onboard the Advanced X-ray Astronomical Facility (AXAF), the following conclusions were found: the dislocations that limited the performance of the high resistivity imager were characterized; the sources of stress were identified and the dislocations found were eliminated; and a charge transfer inefficiency (CTI) of 10(exp -6) and read noise as low as 1.3/e was demonstrated. This sensor must have low noise and a low CTI and must be radiation hardened to withstand any radiation damage from a space environment.

Gregory, J. A.↗

NASA NTRS1993

High-performance visible/UV CCD focal plane technology for spacebased applications

We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.

Burke, B. E.↗

NASA NTRS1990

Advanced CCD imager technology for use from 1 to 10,000 A

A low-noise, high-sensitivity charge-coupled-device (CCD) technology for imaging applications extending from the soft X-ray (1 A) to the near-infrared (10,000 A) regimes was developed together with a fabrication technology for making back-illuminated versions of these devices with quantum efficiencies as high as 90 percent from 5000 to 7000 A. The efforts have focused on two devices, a 64 x 64 pixel back-illuminated imager with two output ports that operates at 2000 frames per second with 23 electrons read noise, and a larger device, with 420 x 420 pixel format, designed for lower frame rates with noise as low as 1.5 electrons and used at visible, UV, and X-ray wavelengths. Applications to plasma diagnostics include Thomson scattering and high-frame-rate imaging in the visible, as well as X-ray imaging and bolometry.

Twichell, J. C.↗