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Cao, Yu

Publications and source records attributed to Cao, Yu.

47 records · Page 3

Visual-Attention-Based Background Modeling for Detecting Infrequently Moving Objects

Motion is one of the most important cues to separate foreground objects from the background in a video. Using a stationary camera, it is usually assumed that the background is static, while the foreground objects are moving most of the time. However, in practice, the foreground objects may show infrequent motions, such as abandoned objects and sleeping persons. Meanwhile, the background may contain frequent local motions, such as waving trees and/or grass. Such complexities may prevent the existing background subtraction algorithms from correctly identifying the foreground objects. We propose a new approach that can detect the foreground objects with frequent and/or infrequent motions. Specifically, we use a visual-attention mechanism to infer a complete background from a subset of frames and then propagate it to the other frames for accurate background subtraction. Furthermore, we develop a feature-matching-based local motion stabilization algorithm to identify frequent local motions in the background for reducing false positives in the detected foreground. The proposed approach is fully unsupervised, without using any supervised learning for object detection and tracking. Extensive experiments on a large number of videos have demonstrated that the proposed approach outperforms the state-of-the-art motion detection and background subtraction methods in comparison.

42 ENGINEERING↗

Solution Processed Titanyl Phthalocyanines as Donors in Solar Cells: Photoresponse to 1000 nm

Here, we report a route to thin-film polymorphs of soluble TiOPc derivatives that exhibit similar near-IR absorptivities as vapor deposited thin-films of the parent TiOPc chromophore (phase-I and phase-II polymorphs) and demonstrate that solution-processed planar and bulk heterojunction solar cells fabricated with one of these derivatives exhibited photoactivity throughout the same near-IR wavelength range without compromising VOC. Solution-processed thin-films of soluble octakis(alkylthio)-substituted TiOPc derivatives 1–3 exhibit absorption extending to 1000 nm. When incorporated into OPV devices, the contributions from the lowest CT excitonic state (Q B band) of 1 to device performance were evident in both PHJ and BHJ architectures, indicating sufficient driving force for PIET. This contribution was improved via intimate mixing of donor and acceptor molecules in a BHJ architecture, albeit with a decrease in efficiency. IPCE of the best performing BHJ device showed a contribution from 1 exceeding that of acceptor PCBM, and extending to 1000 nm.

36 MATERIALS SCIENCE↗

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance R ON,SP (5.12 mΩ · cm 2 ), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/R ON,SP of 727 MW·cm 2 . The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

42 ENGINEERING↗

Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

Native defects in GaN layers grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers showed that optically active vacancy-type defects were formed in the layers. Charge transition of the defects due to electron capture was found to occur when the layers were irradiated by photons with energy above 2.71 eV. The concentration of such defects increased after 600–800 °C annealing, but the defects have not been annealed out even at 1000 °C. They were identified as Ga-vacancy-type defects, such as complexes between Ga vacancies and carbon impurities, and the relationship between their charge transition and optical properties were discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

The effects of near-interfacial trapping induced by ionizing radiation exposure of aligned single-walled carbon nanotube (SWCNT) arrays are investigated via measurements of gate hysteresis in the transfer characteristics of aligned SWCNT field-effect transistors. Gate hysteresis is attributed to charge injection (i.e., trapping) from the SWCNTs into radiation-induced traps in regions near the SWCNT/dielectric interface. Self-consistent calculations of surface-potential, carrier density, and trapped charge are used to describe hysteresis as a function of ionizing radiation exposure. Hysteresis width (h) and its dependence on gate sweep range are investigated analytically. The effects of non-uniform trap energy distributions on the relationship between hysteresis, gate sweep range, and total ionizing dose are demonstrated with simulations and verified experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The High-Resolution IRAS Galaxy Atlas

An atlas of the Galactic plane (-4.7 deg is less than b is less than 4.7 deg), along with the molecular clouds in Orion, rho Oph, and Taurus-Auriga, has been produced at 60 and 100 microns from IRAS data. The atlas consists of resolution-enhanced co-added images with 1 min - 2 min resolution and co-added images at the native IRAS resolution. The IRAS Galaxy Atlas, together with the Dominion Radio Astrophysical Observatory H(sub I) line/21 cm continuum and FCRAO CO (1-0) Galactic plane surveys, which both have similar (approx. 1 min) resolution to the IRAS atlas, provides a powerful tool for studying the interstellar medium, star formation, and large-scale structure in our Galaxy. This paper documents the production and characteristics of the atlas.

Cao, Yu↗

The Contribution of Ionizing Stars to the Far-Infrared and Radio Emission in the Galaxy

This is the first report of a new contract. However, this project represents ongoing work, so there are completed tasks as well as newly started tasks to report. The project involves the completion of the IRAS Galaxy Atlas (IGA), a large image database produced using data from the Infrared Astronomical Satellite (IRAS). In this phase, the project switches from the production and characterization of the IGA to its use in astronomical research studies of massive star formation. The research utilizes the IGA as well as two other large data sets being produced by research partners.

Cao, Yu↗

Parallelization and Algorithmic Enhancements of High Resolution IRAS Image Construction

The Infrared Astronomical Satellite caried out a nearly complete survey of the infrared sky, and the survey data are important for the study of many astrophysical phenomena. However, many data sets at other wavelengths have higher resolutions than that of the co-added IRAS maps, and high resolution IRAS images are strongly desired both for their own information content and their usefulness in correlation. The HIRES program was developed by the Infrared Processing and Analysis Center (IPAC) to produce high resolution (approx. 1') images from IRAS data using the Maximum Correlation Method (MCM). We describe the port of HIRES to the Intel Paragon, a massively parallel supercomputer, other software developments for mass production of HIRES images, and the IRAS Galaxy Atlas, a project to map the Galactic plane at 60 and 100(micro)m.

Satellite infrared IRAS IRAS maps IRAS images↗