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Carpenter, Arthur

Publications and source records attributed to Carpenter, Arthur.

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

FY2024 Q4 L2 Milestone 8237 for Opacity-on-NIF

This document addresses parts 2 and 3 of the original milestone request. In the following writeup, the development of OpSpecTR at LLNL by LLNL and NNSS personnel will be detailed first, followed by a write-up of the development of Vme-resolved simulaVons of the opacity-on-NIF experiment. Capsule backlight simulaVons, hohlraum simulaVons, and sample simulaVons from CASSIO are combined to produce the line of sight from the capsule to an effecVve OpSpec posiVon. Spectra are generated by post-processing these simulaVons from either Spect3D, a commercial software by Prism ComputaVonal Sciences, or FESTR (Finite Element Spectroscopic Transport of RadiaVon), a LANL code. While the simulaVons do not at this stage proceed late enough to include the worst of the backgrounds generated from the hohlraum experimentally and each post-processing simulaVon includes only one ray for each spectrometer channel, these efforts represent proof of concept for a new capability to complete Vme-resolved and Vmegated simulaVons for the complete line of sight of the complex opacity-on-NIF geometry. Future work will be discussed at the end of the report for both efforts.

42 ENGINEERING↗
DOE OSTI2024

Communication—Controlling Etching of Germanium through Surface Charge Manipulation

Potassium hydroxide (KOH) aqueous solutions can effectively etch germanium. Etch rates were determined in an electrolytic etch cell. Electrically isolated Ge wafers were subject to an etch rate of 1.45 ± 0.07 nm min −1 , increasing to 12.6 ± 0.2 nm min −1 when grounded, 97 ± 2 nm min −1 when biased at −0.9 V, and 138 ± 2 nm min −1 with periodic biasing. Results suggest that the previously reported limited etching in KOH is associated with the recombination of holes with electrons injected from the surface reaction. The results of this study demonstrate that changing the hole concentration through biasing is an effective tool to control electrolytic etch rates, enabling future selective etching processes for germanium.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗