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Carts, Martin A.

Publications and source records attributed to Carts, Martin A..

Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.

Lauenstein, Jean-Marie↗

Investigating the Effects of Gamma Radiation on Selected Chemicals for Use in Biosignature Detection Instruments on the Surface of Jupiter's Moon Europa

Jupiter's moon Europa is a prime target for the search for potential signs of life in the solar system. The Europa Lander Science Definition Team Report outlined investigations and measurement requirements on a future Europa Lander and has led us to consider application of powerful techniques such as pyrolysis and derivatization gas chromatography mass spectrometry (GC-MS) and laser desorption mass spectrometry (LD-MS) to elucidate the organic composition of near-surface ice and minerals. Definitive identification of chemical biosignatures using such techniques is strongly enabled by the use of various chemicals, such as perfluorotributylamine (PFTBA) for the MS calibration, α-cyano-hydroxycinnamic acid (CHCA) for matrix-assisted laser desorption and ionization (MALDI) and N,N-dimethylformamide dimethyl acetal (DMF-DMA), N-tert-butyldimethylsilyl-N-methyltrifluoroacetamide (MTBSTFA) and tetramethylammonium hydroxide (TMAH) for wet chemistry GC-MS protocols. The jovian radiation environment is known to represent a uniquely challenging risk to mission performance and lifetime, principally due to high radiation levels. To assess the potential ionizing radiation damage to these important chemicals, we tested their effectiveness following gamma radiation exposure doses up to the anticipated Europa Lander rating requirement of 300 krad(Si). The chemicals were sealed in glass ampules under vacuum (<10 mTorr), to reduce trapped oxygen gas, as the oxidation by O2 may be enhanced in the presence of radiation. We report that all five chemicals exposed to total ionizing doses of 0, 150 and 300 krad(Si) maintained their full effectiveness, and no significant degradation was observed.

Radiation↗

A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors

Boutte, Alvin J.↗

A NASA Perspective and Validation and Testing of Design Hardening for the Natural Space Radiation Environment (GOMAC Tech 03)

With the dearth of dedicated radiation hardened foundries, new and novel techniques are being developed for hardening designs using non-dedicated foundry services. In this paper, we will discuss the implications of validating these methods for the natural space radiation environment issues: total ionizing dose (TID) and single event effects (SEE). Topics of discussion include: Types of tests that are required, Design coverage (i.e., design libraries: do they need validating for each application?) A new task within NASA to compare existing design. This latter task is a new effort in FY03 utilizing a 8051 microcontroller core from multiple design hardening developers as a test vehicle to evaluate each mitigative technique.

Day, John H.↗

Characteristics of Single-Event Upsets in a Fabric Switch (ADS151)

Abstract-Two types of single event effects - bit errors and single event functional interrupts - were observed during heavy-ion testing of the AD8151 crosspoint switch. Bit errors occurred in bursts with the average number of bits in a burst being dependent on both the ion LET and on the data rate. A pulsed laser was used to identify the locations on the chip where the bit errors and single event functional interrupts occurred. Bit errors originated in the switches, drivers, and output buffers. Single event functional interrupts occurred when the laser was focused on the second rank latch containing the data specifying the state of each switch in the 33x17 matrix.

Buchner, Stephen↗

Proton Single Event Effects (SEE) Testing of the Myrinet Crossbar Switch and Network Interface Card

As part of the Remote Exploration and Experimentation Project (REE), work was performed to do a proton SEE (Single Event Effect) evaluation of the Myricom network protocol system (Myrinet). This testing included the evaluation of the Myrinet crossbar switch and the Network Interface Card (NIC). To this end, two crossbar switch devices and five components in the NIC were exposed to the proton beam at the University of California at Davis Crocker Nuclear Laboratory (CNL).

Howard, James W., Jr.↗