Engineering topics

Carts, Marty

Publications and source records attributed to Carts, Marty.

3 records

NASA NTRS2018

Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology

The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.

Radiation↗

NASA NTRS2008

Phillips SA8016BW 2.5 GHz Synthesizer SEE Testing

This viewgraph presentation reviews the Single Event Effects (SEE) testing of the Phillips SA8016BW 2.5 GHz Synthesizer that was chose by the GLAST Program for Frequency Generation. Included in this are diagrams of the phased-locked loop (PLL), the synthesizer, and heater.

Carts, Marty↗

NASA NTRS2004

A Comparative Study of Heavy Ion and Proton Induced Bit Error Sensitivity and Complex Burst Error Modes in Commercially Available High Speed SiGe BiCMOS

A viewgraph presentation that reviews recent SiGe bit error test data for different commercially available high speed SiGe BiCMOS chips that were subjected to various levels of heavy ion and proton radiation. Results for the tested chips at different operating speeds are displayed in line graphs.

Marshall, Paul↗