Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies
No abstract available
ionizing radiation↗
Engineering topics
Castaneda, C. M.
Publications and source records attributed to Castaneda, C. M..
Advanced CMOS Radiation Effects Testing and Analysis
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.
cmos↗
Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies
We report low-energy proton and alpha particle SEE data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) that demonstrates the criticality of understanding and using low-energy protons for SEE testing of highly-scaled technologies
single-event effects↗