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Chapman, R. L.

Publications and source records attributed to Chapman, R. L..

8 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

The uncounted benefits: Federal efforts in domestic technology transfer

Organized technology transfer activities conducted by the agencies of the U.S. government are described. The focus is upon agency or departmental level activity rather than the laboratory level. None of the programs on which information was collected has been assessed or evaluated individually. However, the aggregate programs of the government have been judged in terms of obvious gaps and opportunities for future improvement. An overview, descriptions of the various agency or department programs of technology transfer, a list of persons interviewed or consulted during the survey, and a bibliography of publications, reports and other material made available to the study staff are given. An extensive appendix of illustrative material collected from the various programs is also given.

Chapman, R. L.↗
NASA NTRS1985

High-efficiency double-heterostructure AlGaAs/GaAs solar cells

Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.

Gale, R. P.↗
NASA NTRS1984

Efficient AlGaAs shallow-homojunction solar cells

Shallow-homojunction n+/p/p+ solar cells with one-sun, AM1 conversion efficiencies as high as 12.9 percent have been fabricated in Al0.2Ga0.8As epitaxial layers grown by organometallic chemical vapor deposition on single-crystal GaAs substrates. For these cells, which have n+ layers thinned by anodic oxidation to about 500 A, the quantum efficiencies in the short-wavelength portion of the spectrum are as high as the best reported for AlGaAs cells with high band-gap window layers.

Gale, R. P.↗
NASA NTRS1984

A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

Gale, R. P.↗
NASA NTRS1972

Transformation of scientists and engineers into managers

The purposes of this research were to determine the principal problems and obstacles faced by specialists during the transition period when they are becoming managers, and to discover ways by which their difficulties might be avoided or overcome. It was found that senior management officials are unaware--or tend to ignore the importance--of the transition process and its problems, that little attention has been given to developing management training to overcome transition problems, and that much of the training which is offered is largely irrelevant to these problems.

Bayton, J. A.↗