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Chatterjee, Bikramjit

Publications and source records attributed to Chatterjee, Bikramjit.

3 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

We present iron-doped beta gallium oxide (Fe- β Ga2O3) as a candidate for photoconductive semiconductor switches (PCSSs) with sub-bandgap light. From a commercially available Fe- β Ga2O3 wafer, we first did material characterization. This included measurements of absorption coefficient and dopant composition, carrier activation energy up to 200 °C, break down field of planar electrodes (limited from material passivation), and free carrier recombination lifetime, and thermal effects up to 203 °C on photocurrent with a 447 nm light emitting diode (LED) source. Here, we then demonstrated pulsed operation of a Fe- β Ga2O3 PCSS under different sub-bandgap wavelengths (355, 532, and 1064 nm) and sub-ns pulses. Fe- β Ga2O3 is a candidate for high temperature PCSS with 355 nm responsivity of 7×10 -7 A-cm/W-kV at room temperature and up to 5.5×10 -4 A-cm/W-kV at 200 °C. From these investigations, we discuss a simple trap model to describe the illumination process of the PCSS. Fe- β Ga2O3 has a high breakdown field and has moderate responsivity characteristics, but the dark current at high temperature leads to low photo-to-dark current ratio (PDCR). Regardless, we verify its potential as a PCSS material for harsh environment applications.

42 ENGINEERING↗
DOE OSTI2020

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗