Engineering topics

Chattopadhyay, K.

Publications and source records attributed to Chattopadhyay, K..

10 records

NASA NTRS2000

The Preparation Conditions of Chromium Doped ZnSe and Their Effect on The Infrared Luminescence Properties

We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the Physical Vapor Transport method. Room temperature lifetime values between 6 and 8 microseconds were measured for samples with Cr (2+) concentrations from low 10 (exp 17) to high 10 (exp 18) per cubic centimeter range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10 (exp 19) per cubic centimeter.

Burger, A.↗

NASA NTRS2000

The Preparation Conditions of Chromium Doped ZnSe and Their Effect on the Infrared Luminescence Properties

We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the physical vapor transport method. Room temperature lifetime values between 6 and 8 micro seconds were measured for samples with Cr2+ from low 10(exp 17) to high 10(exp 18) / cubic cm range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10(exp 19) / cubic CM.

Burger, A.↗

NASA NTRS1999

In-Situ Optical Determination of Thermomechanical Properties of ZnSe and ZnTe Crystals

At temperatures above 1/2 T(sub m), the generation and movement of dislocations may result due to the load created by the weight of the crystal itself The deformation may be expected to increase the line defect density and may result in generation of low angle grain boundaries, especially in the regions of the crystal attached to the ampule. It has often been suspected that elimination of this effect in space can improve crystallinity of crystals grown under microgravity conditions, however, a direct experimental proof of such relation is still missing. In this work we have designed and built a system of in-situ optical detection and measurement of the mechanical deformations of a crystal wafer under its own weight, and studied the deformation effects as a function of temperature. The results of the measurements for ZnSe and ZnTe crystal wafers will be presented.

Burger, A.↗

NASA NTRS1999

Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

Cr-doped ZnSe single crystals were grown by a self-seeded physical vapor transport technique in both vertical (stabilized) and horizontal configurations. The source materials were mixtures of ZnSe and CrSe. Growth temperatures were in the range of 1140-1150 C and the furnace translation rates were 1.9-2.2 mm/day. The surface morphology of the as-grown crystals was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Different features of the as-grown surface of the vertically and horizontally grown crystals suggest that different growth mechanisms were involved in the two growth configurations. The [Cr] doping levels were determined to be in the range of 1.8-8.3 x 10 (exp 19) cm (exp -3) from optical absorption measurements. The crystalline quality of the grown crystals were examined by high-resolution triple-crystal X-ray diffraction (HRTXD) analysis.

Su, Ching-Hua↗

NASA NTRS1998

Surface Morphology of Undoped and Doped ZnSe Films

Rare-earth doped ions in polar II-VI semiconductors have recently played an important role in the optical properties of materials and devices. In this study, undoped ZnSe and erbium doped ZnSe films were grown by radio frequency (RF) magnetron sputtering method. Atomic Force Microscopy (AFM) was used together with optical microscopy and UV-Vis spectroscopy to characterize the films. Doped samples were found to have higher surface roughness and quite different surface morphology compared to that of undoped samples. The grown films generally show a relatively smooth and uniform surface indicating that they are of overall good quality. The impact of plasma etching on ZnSe:Er film examined under AFM is also discussed.

George, T.↗

NASA NTRS1998

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Hayes, M.↗

NASA NTRS1998

Purification and Crystal Growth of Lead Iodide by Physical Vapor Transport Method

Lead iodide (PbI2) is a layered compound semiconductor being developed as room temperature x- and gamma-ray detector. Compared to the more studied material, mercuric iodide, PbI2 has a higher melting temperature and no phase transition until liquid phase which are indications of better mechanical properties. In this study, the source material was purified by the zone-refining process, and the purest section was extracted from center of the the zone-refined ingot to be grown by physical vapor transport (PVT) method. The zone-refined material and as-grown crystals were characterized by optical microscopy and differential scanning calorimetry (DSC) to reveal the surface morphology, purity and stoichiometry. The results shows that both materials are near-stoichiometric composition, with the purity of the as-grown crystals higher than zone-refined materials. The resistivity of the as-grown crystal (10" Omega-cm) was derived from current-voltage (I-V) measurement, and is 10 times higher than the zone-refined materials. Detail results will be presented and discussed.

Wright, G. W.↗

NASA NTRS1998

Raman and Infrared Spectroscopy of Yttrium Aluminum Borate Glasses and Glass-ceramics

Raman spectra of glasses and glass-ceramics in the Y2O3-Al2O3-B2O3 system are reported. Glasses with B2O3 contents ranging from 40 to 60 mole percent were prepared by melting 20 g of the appropriate oxide or carbonate powders in alumina crucibles at 1400 C for 45 minutes. Subsequent heat treatments of the glasses at temperatures ranging from 600 to 800 C were performed in order to induce nucleation and crystallization. It was found that Na2CO3 added to the melt served as a nucleating agent and resulted in uniform bulk crystallization. The Raman spectra of the glasses are interpreted primarily in terms of vibrations of boron - oxygen structural groups. Comparison of the Raman spectra of the glass-ceramic samples with spectra of aluminate and borate crystalline materials reveal that these glasses crystallize primarily as yttrium aluminum borate, YAl3(BO3)4.

Bradley, J.↗

NASA NTRS1998

Characterization of Semi-Insulating CdTe Crystals Grown by Horizontal Seeded Physical Vapor Transport

CdTe crystals were grown by horizontal seeded physical vapor transport technique in uncoated and boron nitride coated fused silica ampoules with the source materials near the congruent sublimation condition. The grown crystals were characterized by current-voltage measurements, low temperature photoluminescence spectroscopy, near IR transmission optical microscopy, spark source mass spectroscopy and chemical etching. The measured resistivities of the crystals were in the high-10(exp 8) ohm-cm range. Although the crystal grown in the boron nitride coating was contaminated with boron from the photoluminescence measurements, the coating yielded a single crystal with no inclusions or precipitates.

Chattopadhyay, K.↗

NASA NTRS1992

Nonequilibrium synthesis of NbAl3 and Nb-Al-V alloys by laser cladding. I - Microstructure evolution

The evolution of the microstructure in NbAl3 synthesized by a laser cladding technique (a rapid solidification process, with cooling rates up to 10 exp 6 C/sec) is investigated, and the phases are identified using convergent beam electron diffraction. Two new metastable phases were identified and characterized in detail. The effect of adding V on the final microstructure was also investigated, and the various phase chemistries and the partitioning of different elements into different phases were studied.

Sircar, S.↗