Engineering topics

Chen, Gang

Publications and source records attributed to Chen, Gang.

10 records

DOE OSTI2024

Reversible two-way tuning of thermal conductivity in an end-linked star-shaped thermoset

Polymeric thermal switches that can reversibly tune and significantly enhance their thermal conductivities are desirable for diverse applications in electronics, aerospace, automotives, and medicine; however, they are rarely achieved. Here, we report a polymer-based thermal switch consisting of an end-linked star-shaped thermoset with two independent thermal conductivity tuning mechanisms—strain and temperature modulation—that rapidly, reversibly, and cyclically modulate thermal conductivity. The end-linked star-shaped thermoset exhibits a strain-modulated thermal conductivity enhancement up to 11.5 at a fixed temperature of 60 °C (increasing from 0.15 to 2.1 W m –1 K –1 ). Additionally, it demonstrates a temperature-modulated thermal conductivity tuning ratio up to 2.3 at a fixed stretch of 2.5 (increasing from 0.17 to 0.39 W m –1 K –1 ). When combined, these two effects collectively enable the end-linked star-shaped thermoset to achieve a thermal conductivity tuning ratio up to 14.2. Moreover, the end-linked star-shaped thermoset demonstrates reversible tuning for over 1000 cycles. The reversible two-way tuning of thermal conductivity is attributed to the synergy of aligned amorphous chains, oriented crystalline domains, and increased crystallinity by elastically deforming the end-linked star-shaped thermoset.

42 ENGINEERING↗

NASA NTRS2015

Nanocomposites with High Thermoelectric Figures of Merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k(sub B)T, wherein k(sub B) is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

NASA NTRS2014

Thermoelectric Skutterudite Compositions and Methods for Producing the Same

Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.

Ren, Zhifeng↗

NASA NTRS2012

Nanocomposites with high thermoelectric figures of merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k.sub.BT, wherein k.sub.B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

NASA NTRS2009

Thermoelectric properties by high temperature annealing

The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

Ren, Zhifeng↗

NASA NTRS2009

Metal-doped semiconductor nanoparticles and methods of synthesis thereof

The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

Ren, Zhifeng↗

NASA NTRS2008

Nanocomposites with high thermoelectric figures of merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k.sub.BT, wherein k.sub.B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

NASA NTRS2007

Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions

The present invention provides methods for synthesis of IV VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20.degree. C. to about 360.degree. C., for a duration sufficient for generating nanoparticles as binary alloys of the IV VI elements.

Ren, Zhifeng↗

NASA NTRS2004

Hand-Held Color Meters Based on Interference Filters

Small, inexpensive, hand-held optoelectronic color-measuring devices based on metal-film/dielectric-film interference filters are undergoing development. These color meters could be suitable for use in a variety of applications in which there are requirements to quantify or match colors for aesthetic purposes but there is no need for the high spectral resolution of scientific-grade spectrometers. Such applications typically occur in the paint, printing, and cosmetic industries, for example. The figure schematically depicts a color meter of this type being used to measure the color of a sample in terms of the spectrum of light reflected from the sample. Light from a white source (for example, a white light-emitting diode) passes through a collimating lens to the sample. Another lens collects some of the light reflected from the sample and focuses the light onto the input end of optical fiber. Light emerging from the output end of the optical fiber illuminates an array of photodetectors covered with metal/dielectric-film interference filters like those described in Metal/Dielectric-film Interference Color Filters (NPO-20217), NASA Tech Briefs, Vol. 23, No. 2 (February 1999), page 70. Typically, these are wide-band-pass filters, as shown at the bottom of the figure. The photodetector array need not be of any particular design: it could be something as simple as an assembly containing several photodiodes or something as elaborate as an active-pixel sensor or other imaging device. What is essential is that each of the photodetectors or each of several groups of photodetectors is covered with a metal/dielectric-film filter of a different color. In most applications, it would be desirable to have at least three different filters, each for a spectral band that contains one of the three primary additive red, green, and blue colors. In some applications, it may be necessary to have more than three different color filters in order to characterize subtle differences in color (or in the sensation of color) that cannot be characterized with sufficient precision by use of the primary colors alone.

Snyder, G. Jeffrey↗

NASA NTRS2004

Current Pulses Momentarily Enhance Thermoelectric Cooling

The rates of cooling afforded by thermoelectric (Peltier) devices can be increased for short times by applying pulses of electric current greater than the currents that yield maximum steady-state cooling. It has been proposed to utilize such momentary enhancements of cooling in applications in which diode lasers and other semiconductor devices are required to operate for times of the order of milliseconds at temperatures too low to be easily obtainable in the steady state. In a typical contemplated application, a semiconductor device would be in contact with the final (coldest) somewhat taller stage of a multistage thermoelectric cooler. Steady current would be applied to the stages to produce steady cooling. Pulsed current would then be applied, enhancing the cooling of the top stage momentarily. The principles of operation are straightforward: In a thermoelectric device, the cooling occurs only at a junction at one end of the thermoelectric legs, at a rate proportional to the applied current. However, Joule heating occurs throughout the device at a rate proportional to the current squared. Hence, in the steady state, the steady temperature difference that the device can sustain increases with current only to the point beyond which the Joule heating dominates. If a pulse of current greater than the optimum current (the current for maximum steady cooling) is applied, then the junction becomes momentarily cooled below its lowest steady temperature until thermal conduction brings the resulting pulse of Joule heat to the junction and thereby heats the junction above its lowest steady temperature. A theoretical and experimental study of such transient thermoelectric cooling followed by transient Joule heating in response to current pulses has been performed. The figure presents results from one of the experiments. The study established the essential parameters that characterize the pulse cooling effect, including the minimum temperature achieved, the maximum temperature overshoot, the time to reach minimum temperature, the time while cooled, and the time between pulses. It was found that at large pulse amplitude, the amount of pulse supercooling is about a fourth of the maximum steady-state temperature difference. For the particular thermoelectric device used in one set of the experiments, the practical optimum pulse amplitude was found to be about 3 times the optimum steady-state current. In a further experiment, a pulse cooler was integrated into a small commercial thermoelectric threestage cooler and found to provide several degrees of additional cooling for a time long enough to operate a semiconductor laser in a gas sensor.

Snyder, G. Jeffrey↗