Chen, Y H | Search NASA

DOE OSTI2011

Strong circular photogalvanic effect in ZnO epitaxial films

A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

36 MATERIALS SCIENCE↗

DOE OSTI2011

Void evolution in polycarbonate at elevated temperatures

The void evolution in polycarbonate (PC) at elevated temperatures was investigated. Internal cylindrical cracks and voids were induced in PC by Nd-YAG laser irradiation. During the annealing at temperatures of 177-197 deg. C, the spherical void grows to a maximum size, which then decreases, and is finally leveling off. A model of void evolution based on the evaporation and condensation mechanisms for growth and shrinkage is proposed. The theoretical predictions are in good agreement with the experimental data. The activation energies of evaporation and condensation processes are determined to be 477.31 and 611.49 kJ/mol, respectively.

36 MATERIALS SCIENCE↗