Ampere field fluctuation from acoustic phonons as a possible source of spin decoherence
Here, we present a simple theory for estimating spin decoherence due to spin–phonon coupling in a lattice, and apply the theory to the Ampere field fluctuation from acoustic phonons. The Ampere field is generated by charge current loops around each lattice site due to acoustic phonon motion of the ions. The spin decoherence time due to the Ampere field fluctuation is estimated for NV centers and Mo impurities in SiC, and quantum dot qubits in Ge, GaAs, InAs, and InSb for temperature range 2 to 300 K. For most materials the estimated decoherence time is orders of magnitude longer than reported experimental values at the same temperature. The only exception is Mo impurity in SiC, for which the experimental decoherence time at 2 K is close to that due to Ampere field fluctuation.