Engineering topics
Chen, Yunpeng
Publications and source records attributed to Chen, Yunpeng.
Tunable Magnetic Resonance in Microwave Spintronics Devices
Magnetic resonance is one of the key properties of magnetic materials for the application of microwave spintronics devices. The conventional method for tuning magnetic resonance is to use an electromagnet, which provides very limited tuning range. Hence, the quest for enhancing the magnetic resonance tuning range without using an electromagnet has attracted tremendous attention. In this paper, we exploit the huge exchange coupling field between magnetic interlayers, which is on the order of 4000 Oe and also the high frequency modes of coupled oscillators to enhance the tuning range. Furthermore, we demonstrate a new scheme to control the magnetic resonance frequency. Moreover, we report a shift in the magnetic resonance frequency as high as 20 GHz in CoFe based tunable microwave spintronics devices, which is 10X higher than conventional methods.
Tunable Magnetic Resonance in Microwave Spintronics Devices
Magnetic resonance is one of the key properties of magnetic materials for the application of microwave spintronics devices. The conventional method for tuning magnetic resonance is to use an electromagnet, which provides very limited tuning range. Hence, the quest for enhancing the magnetic resonance tuning range without using an electromagnet has attracted tremendous attention. In this paper, we exploit the huge exchange coupling field between magnetic interlayers, which is on the order of 4000 Oe and also the high frequency modes of coupled oscillators to enhance the tuning range. Furthermore, we demonstrate a new scheme to control the magnetic resonance frequency. Moreover, we report a shift in the magnetic resonance frequency as high as 20 GHz in CoFe-based tunable microwave spintronics devices, which is 10X higher than conventional methods.
Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer
A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJbased microwave detector can be used as an on-chip microwave phase and spectrum analyzer.
Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer
A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJ-based microwave detector can be used as an on-chip microwave phase and spectrum analyzer.
Characterizing the In-Phase Reflection Bandwidth Theoretical Limit of Artificial Magnetic Conductors With a Transmission Line Model
We validate through simulation and experiment that artificial magnetic conductors (AMC s) can be well characterized by a transmission line model. The theoretical bandwidth limit of the in-phase reflection can be expressed in terms of the effective RLC parameters from the surface patch and the properties of the substrate. It is found that the existence of effective inductive components will reduce the in-phase reflection bandwidth of the AMC. Furthermore, we propose design strategies to optimize AMC structures with an in-phase reflection bandwidth closer to the theoretical limit.