Engineering topics
Publications and source records attributed to Choma, J., Jr..
This paper summarizes and reports a radiation hardened Spacecraft Integrated Sensor/Circut Technology that has been delivered for flight applications to be flown on board STRV-2 (Space Technology Research Vehicle-2).
A circuit model for an existing silicon integrated bipolar junction transistor (IBJT) is used to evaluate presently achievable high frequency circuit performance. The relationship between circuit model and processing parameters are semi-quantitatively explored to make predictions on the frequency response, which can be achieved through realistic device fabrication modifications. A new figure of merit is introduced, which is defined as the signal frequency at which an integrated bipolar junction transistor can deliver a power gain of G. The most sensitive parameter influencing attainable high frequency IBJT performance is base resistance.