Engineering topics

Chorey, C. M.

Publications and source records attributed to Chorey, C. M..

32 records · Page 2

NASA NTRS1990

Microwave Conductivity of Laser Ablated YBa2Cu3O7-delta Superconducting Films and Its Relation to Microstrip Transmission Line Performance

We report on the values of the microwave conductivity in the normal (sigma(subN)) and superconducting (sigma*=sigma(sub1)-j sigma(sub2)) states of two laser ablated YBa2CU3O7(sigma) thin films at 35 GHz, in the temperature range from 20 to 300 K. The films 0.7 and 0.4 micrometers) were deposited on LaA10(sub3) by laser ablation. The conductivity was obtained from the microwave power transmitted through the films and assuming a two-fluid model. Values of sigma(subN) approximately 2.3 X 10(exp5) S/m at room temperature for both films, and of sigma(sub1) approximately 6.3 X 10(exp5) and 4.6 X 10(exp5) S/m at temperatures around 80 K were obtained for the 0.7 and 0.4 micrometer films respectively. For sigma(sub2) values of 4.9 X 10(exp6) and 5.4 X 10(exp6) S/m were obtained for the 0.7 and 0.4 micrometer films at 80 K. The expected conductor losses and Q-factor of a superconducting ring resonator were calculated using these conductivity values. The theoretical values were then compared with the experimental results obtained for a resonator fabricated from one of these films.

Bhasin, K. B.↗

NASA NTRS1990

Microwave conductivity of laser ablated YBaCuO superconducting films and its relation to microstrip transmission line

The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response was studied of laser ablated YBa2Cu3O(7-x)/LaAlO3 thin films as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.

Bhasin, K. B.↗

NASA NTRS1990

Performance and modeling of superconducting ring resonators at millimeter-wave frequencies

Microstrip ring resonators operating at 35 GHz were fabricated from laser ablated YBCO thin films deposited on lanthanum aluminate substrates. They were measured over a range of temperatures and their performance compared to identical resonators made of evaporated gold. Below 60 Kelvin the superconducting strip performed better than the gold, reaching an unloaded Q approximately 1.5 times that of gold at 25 K. A shift in the resonant frequency follows the form predicted by the London equations. The Phenomenological Loss Equivalence Method is applied to the ring resonator and the theoretically calculated Q values are compared to the experimental results.

Bhasin, K. B.↗

NASA NTRS1990

High temperature superconducting thin film microwave circuits: Fabrication, characterization, and applications

Epitaxial YBa2Cu3O7 films were grown on several microwave substrates. Surface resistance and penetration depth measurements were performed to determine the quality of these films. Here the properties of these films on key microwave substrates are described. The fabrication and characterization of a microwave ring resonator circuit to determine transmission line losses are presented. Lower losses than those observed in gold resonator circuits were observed at temperatures lower than critical transition temperature. Based on these results, potential applications of microwave superconducting circuits such as filters, resonators, oscillators, phase shifters, and antenna elements in space communication systems are identified.

Bhasin, K. B.↗

NASA NTRS1990

Complex permittivity of lanthanum aluminate in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

Dielectric constants of microwave substrates are required in the design of superconducting microwave circuits at various temperatures. In this paper, the results are reported of a study of the complex permittivity of the newly developed lanthanum aluminate (LaAlO3) substrate, in the 20 to 300 K temperature range at frequencies from 26.5 to 40.0 GHz. The value of the complex permittivity was obtained by measuring the sample scattering parameters using a microwave waveguide technique. It is observed that, while the dielectric constant did not change appreciably with frequency, its value decreased by approximately 14 percent from room temperature to 20 K.

Miranda, F. A.↗

NASA NTRS1990

High temperature superconducting thin film microwave circuits - Fabrication, characterization, and applications

Epitaxial YBa2Cu3O7 films were grown on several microwave substrates. Surface resistance and penetration depth measurements were performed to determine the quality of these films. Here, the properties of these films on key microwave substrates are described. The fabrication and characterization of a microwave ring resonator circuit to determine transmission line losses are presented. Lower losses than those observed in gold resonator circuits were observed at temperatures lower than critical transition temperature. Based on these results, potential applications of microwave superconducting circuits such as filters, resonators, oscillators, phase shifters, and antenna elements in space communication systems are identified.

Bhasin, K. B.↗

NASA NTRS1989

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Warner, J. D.↗

NASA NTRS1989

High frequency GaAlAs modulator and photodetector for phased array antenna applications

A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

Claspy, P. C.↗

NASA NTRS1988

High frequency GaAlAs modulator and photodetector for phased array antenna applications

Claspy, P. C.↗

NASA NTRS1987

Improved beta-SiC heteroepitaxial films using off-axis Si substrates

All beta-SiC films grown using on-axis (001) Si substrates that have been examined with transmission electron microscopy exhibit a high density of interfacial twins, stacking faults, and antiphase disorder. The antiphase boundaries can be decorated by chemical etching, sputter etching, wet oxidation, and beta-SiC growth in the presence of diborane. All traces of antiphase disorder are eliminated when the heteroepitaxial growth is carried out on vicinal (001) Si substrates that are tilted 2 deg about a 110-line axis. In addition, growth on the off-axis Si produces beta-SiC films that are significantly smoother than on-axis films. The density of stacking faults is apparently unaffected by growth on the off-axis substrates.

Powell, J. A.↗

NASA NTRS1987

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.↗

NASA NTRS1987

Antiphase boundaries in epitaxially grown beta-SiC

When the surface of beta-SiC, grown epitaxially on (001) silicon by chemical vapor deposition, is chemically etched, boundaries appear which may be observed by optical or scanning electron microscopy. Examination by plan-view and cross-sectional transmission electron microscopy shows boundaries in the film which exhibit line or fringe contrast. Convergent beam electron diffraction has been used to show that these boundaries separate domains that are in an antiphase relationship to each other. A model is presented which discusses the formation of these domains from independent nucleation on a stepped substrate surface.

Pirouz, P.↗

NASA NTRS1987

Lattice defects in beta-SiC grown epitaxially on silicon substrates

Defects generated on beta-SiC grown on a (001) silicon substrate by chemical vapor deposition are characterized and their mechanism of formation discussed. It is argued that nucleation plays a primary role in this heteroepitaxial system where the lattice mismatch is so large.

Pirouz, P.↗

NASA NTRS1987

Microscopy of epitaxially grown beta-SiC on 001-plane silicon

Various defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.

Pirouz, P.↗