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Choudhury, Debabani

Publications and source records attributed to Choudhury, Debabani.

11 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Experimental Investigation of 60 GHz Transmission Characteristics Between Computers on a Conference Table for WPAN Applications

In this paper, the first measurements of the received radiated power between antennas located on a conference table to simulate the environment of antennas embedded in laptop computers for 60 GHz Wireless Personal Area Network (WPAN) applications is presented. A high gain horn antenna and a medium gain microstrip patch antenna for two linear polarizations are compared. It is shown that for a typical conference table arrangement with five computers, books, pens, and coffee cups, the antennas should be placed a minimum of 5 cm above the table, but that a height of greater than 20 cm may be required to maximize the received power in all cases.

Ponchak, George E.↗
NASA NTRS1996

Split-Waveguide Mounts For Submillimeter-Wave Multipliers And Harmonic Mixers

Novel variation of split-waveguide mount for millimeter-and submillimeter-wavelength frequency multipliers and harmonic mixers developed. Designed to offer wide range of available matching impedances, while maintaining relatively simple fabrication sequence. Wide tuning range achieved with separate series and parallel elements, consisting of two pairs of noncontacting sliding backshorts, at fundamental and harmonic frequencies. Advantages include ease of fabrication, reliability, and tunability.

Raisanen, Antti↗
NASA NTRS1995

Back-To-Back Barrier Varactor Frequency Multipliers

Two reports present further detailed information about odd-harmonic frequency-multiplier devices described in "Barrier/n/n+ Varactor Frequency Multipliers" (NPO-18428). Devices comprise Schottky-barrier/n/n+ diodes in planar back-to-back configuration.

Choudhury, Debabani↗
NASA NTRS1995

Integrated back to back barrier-N-N(+) varactor diode tripler using a split-waveguide block

The back-to-back barrier-N-N(+) (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance, freedom from external bias and suitability to planarization make it an ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220-GHz waveguide tripler using, for the first time, a planar GaAs bbBNN device integrated on a quartz microstrip circuit is presented. A new split-waveguide block design has been employed to provide the proper embedding impedances to the device at the input and third harmonic output frequencies. A flange-to-flange tripling efficiency of 7% has been obtained at 220 GHz with an output power in excess of 700 mu W. This is believed to be the highest conversion efficiency yet reported for a tripler with an integrated device at this frequency. Theoretical calculations indicate that substantial improvement is possible with modest changes to the device and circuit parameters.

QUARTZ MICROSTRIP CIRCUITS↗
NASA NTRS1994

Improved Fabrication Of Back-To-Back Planar Varactor Diodes

Improved method for fabrication of GaAs-based back-to-back planar varactor diodes simplifies processing and makes fabricated devices less vulnerable to damage at various intermediate process steps. Expected to increase device yields and offers several improvements over older method. Process steps modified and juggled providing simplified processing of devices that are more rugged.

Smith, Richard P.↗
NASA NTRS1994

Single-Barrier-Varactor 200-GHz Tripler

Single-barrier varactor in crossed waveguide serves as experimental frequency-tripling device with output at frequencies ranging from 186 to 207 GHz. Varactor has symmetrical capacitance-vs.-voltage characteristic and antisymmetrical dc current-vs.-voltage characteristic. As result, generates only odd-harmonic currents when radio-frequency voltage applied at zero dc bias.

Choudhury, Debabani↗
NASA NTRS1993

A Back-To-Back Barrier-N-N+ (bbBNN)Diode Tripler at 200 GHz

This paper describes the performance of planar back-to-back Barrier-N-N+ (bbBNN) devices for mm and submm wave multiplier applications. A technique has been developed for characterizing planar bbBNN devices with Vector Network Analyzer, which gives both the series resistance and voltage dependent capacitance of the device.

Diode Tripler↗
NASA NTRS1993

A 200 GHz tripler using a single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗
NASA NTRS1992

A new fabrication technique for back-to-back varactor diodes

A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.

Smith, R. Peter↗
NASA NTRS1992

A 200 GHz tripler using single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has a potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗