Engineering topics

Choudhury, Pabitra

Publications and source records attributed to Choudhury, Pabitra.

3 records

DOE OSTI2024

Plasmon assisted synthesis of TiN-supported single-atom nickel catalysts

We report the deposition of single atom nickel catalyst on refractory plasmonic titanium nitride (TiN) nanomaterials supports using the wet synthesis method under visible light irradiation. TiN nanoparticles efficiently absorb visible light to generate photoexcited electrons and holes. Photoexcited electrons reduce nickel precursor to deposit Ni atoms on TiN nanoparticles’ surface. The generated hot holes are scavenged by the methanol. We studied the Ni deposition on TiN nanoparticles by varying light intensity, light exposure time, and metal precursor concentration. These studies confirmed the photodeposition method is driven by hot electrons and helped us to find optimum synthesis conditions for single atoms deposition. We characterized the nanocatalysts using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). We used density functional theory (DFT) calculations to predict favorable deposition sites and aggregation energy of Ni atoms on TiN. Surface defect sites of TiN are most favorable for single nickel atoms depositions. Interestingly, the oxygen sites on native surface oxide layer of TiN also exhibit strong binding with the single Ni atoms. Plasmon enhanced synthesis method can facilitate photodeposition of single atom catalysts on a wide class of metallic supports with plasmonic properties.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Interaction mechanism of transition metal phthalocyanines on transition metal nitride supports

Here, we investigated the electronic interactions between transition metal phthalocyanine (TMPc’s) on a refractory transition metal nitride support, specifically copper phthalocyanine (CuPc) on titanium nitride (TiN). X-ray Photoelectron Spectroscopy (XPS) results suggest a presence of a few nanometer native oxide layer on the surface of the TiN nanoparticles, which consists of TiN, TiO 2 , and Titanium oxynitrides (Ti x O y N z ). A TiNCuPc nanocomposite was synthesized via a simple mixing method due to the strong binding between CuPc and TiN confirmed by density functional theory (DFT) calculations. Both XPS data and DFT calculations revealed an electron transfer from TiN substrate to CuPc molecule. The nature of charge transfer is not influenced by the presence of an oxide layer on the surface of TiN. Substantial deviations are however found between photoelectron emission microscopy (PEEM) measured work function for TiN (4.68 eV) and theoretically calculated work function for pristine stoichiometric TiN (2.63 eV). This behavior is attributed to the presence of an oxide layer on the TiN surface. TiNCuPc composite system has a work function value between those of TiN and CuPc. Our studies open up an opportunity to apply a new class of materials based on transition metal phthalocyanine/transition metal nitride composites to catalysis and optoelectronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Silicon compatible Sn-based resistive switching memory

Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) – which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO 2 or Al 2 O 3 )/inert cathode device – possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. In this paper, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO 2 , we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. Finally, the time to threshold is shown to be a function of both the voltage stress (V stress ) as well as the initial leakage current (I 0 ) through the device.

42 ENGINEERING↗