Engineering topics

Chu, C. L.

Publications and source records attributed to Chu, C. L..

5 records

NASA NTRS2004

Performance Trade-Offs for MBG Using Different Bandgap Pairs

Present GAInP2/GAAs cell grown on Ge (or GaAs) substrates have demonstrates high efficiency, However, the individual bandgaps (1.85 eV, 1.42 eV respectively) are not the optimum match to convert the AM0 spectrum efficiently, although by reducing the thickness of the GaInP2 cell, good efficiencies have been achieved. Within the III-V alloys, modeling shows that several dual junction cells, comprising different bandgap pairs, could give higher efficiency. This paper outlines the modeling used, the bandgap pairs selected, and projections for the AM0 efficiency assuming that the effects of lattice mismatch associated with the bandgap can be reduced. We also present preliminary data on I-V performance for the selected top and bottom cells and for some full cascade cells. We have included some characterization results to check the bandgaps and lattice strain, to check how closely the fabricated cells conform to the model,

Iles, P. A.↗

NASA NTRS1996

Status of multijunction solar cells

This paper describes Applied Solar's present activity on Multijunction (MJ) space cells. We have worked on a variety of MJ cells, both monolithic and mechanically stacked. In recent years, most effort has been directed to GaInP2/GaAs monolithic cells, grown on Ge substrates, and the status of this cell design will be reviewed here. MJ cells are in demand to provide satellite power because of the acceptance of the overwhelming importance of high efficiency to reduce the area, weight and cost of space PV power systems. The need for high efficiencies has already accelerated the production of GaAs/Ge cells, with efficiencies 18.5-19%. When users realized that MJ cells could provide higher efficiencies (from 22% to 26%) with only fractional increase in costs, the demand for production MJ cells increased rapidly. The main purpose of the work described is to transfer the MOCVD growth technology of MJ high efficiency cells to a production environment, providing all the space requirements of users.

Yeh, Y. C. M.↗

NASA NTRS1991

Recent advances in GaAs/Ge solar cells

By growing the GaAs cell on a Ge substrate, the advantages of GaAs cells can be retained and the higher mechanical strength of the Ge makes larger, thinner GaAs cells possible. To conform to immediate user requirements, GaAs growth conditions were modified to eliminate the additional PV output at GaAs/Ge interface. To demonstrate acceptable cell manufacturing technology, the major areas in cell manufacture were analyzed and developed, and efficiency combined. Also the cells were successfully assembled on current lightweight arrays. The main areas of effort are discussed.

Chu, C. L.↗

NASA NTRS1991

Radiation resistance of Ge, Ge0.93Si0.07, GaAs and Al0.08Ga0.92 as solar cells

Solar cells made of Ge, Ge(0.93)Si(0.07) alloys, GaAs and Al(0.08)Ga(0.92)As were irradiated in two experiments with 1-meV electrons at fluences as great as 1 x 10(exp 16) cm(exp-2). Several general trends have emerged. Low-band-gap Ge and Ge(0.93)Si(0.07) cells show substantial resistance to radiation-induced damage. The two experiments showed that degradation is less for Al(0.08)Ga(0.92)As cells than for similarly irradiated GaAs cells. Compared to homojunctions, cells with graded-band-gap emitters did not show the additional resistance to damage in the second experiment that had been seen in the first. The thickness of the emitter is a key parameter to limit the degradation in GaAs devices.

Timmons, M. L.↗

NASA NTRS1991

Graded-bandgap AlGaAs solar cells for AlGaAs/Ge cascade cells

Some p/n graded-bandgap Al(x)Ga(1-x)As solar cells were fabricated and show AMO conversion efficiencies in excess of 15 percent without antireflection (AR) coatings. The emitters of these cells are graded between 0.008 is less than or equal to x is less than or equal to 0.02 during growth of 0.25 to 0.30 micron thick layers. The keys to achieving this performance were careful selection of organometallic sources and scrubbing oxygen and water vapor from the AsH3 source. Source selection and growth were optimized using time-resolved photoluminescence. Preliminary radiation-resistance measurements show AlGaAs cells degraded less than GaAs cells at high 1 MeV electron fluences, and AlGaAs cells grown on GaAs and Ge substrates degrade comparably.

Timmons, M. L.↗