Engineering topics
Publications and source records attributed to Cockayne, D..
Transmission electron microscopy is used to study the morphology and the composition profile of pure Ge islands grown at high temperature on (001) Si by molecular beam epitaxy.
We report significant differences in the temperature dependent and time-resolved photoluminescence(PL) from low and high surface density InGaAs/GaAs quantum dots (QDs).
A transition between two types of step alignment was observed in a multilayered InGaAs/GaAs quantum-dot (QD) structure. A change to larger QD sizes in smaller concentrations occurred after formation of a dislocation array.
InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.
Large variations in InGaAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs[001] substrates with different surface step densities.
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