Cody, Jeffrey G. | Search NASA

NASA NTRS1992

Pseudomorphic Single-Quantum-Well Lasers Emit At 980 Nm

Narrow-stripe semiconductor lasers emitting at 980 nm include pseudomorphic In0.2Ga0.8As/GaAs/AlxGa1-xAs graded-index-of-refraction, separate-confinement-heterostructure single quantum well(GRINSCH SQW) with overlaid ridge waveguide. 980 nm chosen as one that yields most efficient pumping because there is no absorption in excited states at this wavelength. Suitable for pumping Er(Sup3+)-doped optical-fiber amplifiers in optical-fiber communication systems and optical phased-array ranging systems.

Larsson, Anders↗

NASA NTRS1991

Lateral modes of broad area semiconductor lasers - Theory and experiment

Calculations of the lateral modes of an ideal broad area laser, including the nonlinear interaction between the carriers and the optical field, are made. The results include periodically modulated near fields and single- and double-lobed far fields similar to those previously measured. The unsaturable losses are higher and quantum efficiencies are lower than those determined from plane-wave approximations. Broad area InGaAs-GaAlAs-GaAs quantum-well lasers were fabricated and measured and found to closely agree with the theory in near, far, and spectrally resolved near fields. An occultation experiment on the far field confirms previously predicted unstable resonatorlike modes with V-shaped fronts.

Lang, Robert J.↗