Engineering topics

Cooper, M. J.

Publications and source records attributed to Cooper, M. J..

4 records

DOE OSTI2020

A 3-Year Sample of Almost 1,600 Elves Recorded Above South America by the Pierre Auger Cosmic-Ray Observatory

Elves are a class of transient luminous events, with a radial extent typically greater than 250 km, that occur in the lower ionosphere above strong electrical storms. We report the observation of 1,598 elves, from 2014 to 2016, recorded with unprecedented time resolution (100 ns) using the fluorescence detector (FD) of the Pierre Auger Cosmic-Ray Observatory. The Auger Observatory is located in the Mendoza province of Argentina with a viewing footprint for elve observations of 3∙10sup>6 km ₂, reaching areas above the Pacific and Atlantic Oceans, as well as the Córdoba region, which is known for severe convective thunderstorms. Primarily designed for ultrahigh energy cosmic-ray observations, the Auger FD turns out to be very sensitive to the ultraviolet emission in elves. The detector features modified Schmidt optics with large apertures resulting in a field of view that spans the horizon, and year-round operation on dark nights with low moonlight background, when the local weather is favorable. The measured light profiles of 18% of the elve events have more than one peak, compatible with intracloud activity. Within the 3-year sample, 72% of the elves correlate with the far-field radiation measurements of the World Wide Lightning Location Network. The Auger Observatory plans to continue operations until at least 2025, including elve observations and analysis. To the best of our knowledge, this observatory is the only facility on Earth that measures elves with year-round operation and full horizon coverage.

79 ASTRONOMY AND ASTROPHYSICS↗

NASA NTRS2015

Scientific, Back-Illuminated CCD Development for the Transiting Exoplanet Survey Satellite

We describe the development of the fully depleted, back illuminated charge coupled devices for the Transiting Exoplanet Survey Satellite, which includes a set of four wide angle telescopes, each having a 2x2 array of CCDs. The devices are fabricated on the newly upgraded 200-mm wafer line at Lincoln Laboratory. We discuss methods used to produce the devices and present early performance results from the 100- micron thick, 15x15-microns, 2k x 4k pixel frame transfer CCDs.

quantum efficiency↗

NASA NTRS1995

Fabrication of large-area CCD detectors on high-purity, float-zone silicon

In this report on the fabrication of a 1024 x 1024 charge coupled device (CCD) imager to be used as a soft x-ray sensor onboard the Advanced X-ray Astronomical Facility (AXAF), the following conclusions were found: the dislocations that limited the performance of the high resistivity imager were characterized; the sources of stress were identified and the dislocations found were eliminated; and a charge transfer inefficiency (CTI) of 10(exp -6) and read noise as low as 1.3/e was demonstrated. This sensor must have low noise and a low CTI and must be radiation hardened to withstand any radiation damage from a space environment.

Gregory, J. A.↗

NASA NTRS1993

High-performance visible/UV CCD focal plane technology for spacebased applications

We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.

Burke, B. E.↗