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Cope, A. D.

Publications and source records attributed to Cope, A. D..

7 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Design and performance of 4 x 5120-element visible and 2 x 2560-element shortwave infrared multispectral focal planes

Two solid-state sensors for use in remote sensing instruments operating in the pushbroom mode are examined. The design and characteristics of the visible/near-infrared (VIS/NIR) device and the short-wavelength infrared (SWIR) device are described. The VIS/NIR is a CCD imager with four parallel sensor lines, each 1024 pixel long; the chip design and filter system of the VIS/NIR are studied. The performance of the VIS/NIR sensor with mask and its system performance are measured. The SWIR is a dual-band line imager consisting of palladium silicide Schottky-barrier detectors coupled to CCD multiplexers; the performance of the device is analyzed. The substrate materials and layout designs used to assemble the 4 x 5120-element VIS/NIR array and the 2 x 2560-element SWIR array are discussed, and the planarity of the butted arrays are verified using a profilometer. The optical and electrical characteristics, and the placement and butting accuracy of the arrays are evaluated. It is noted that the arrays met or exceed their expected performance.

Tower, J. R.↗
NASA NTRS1975

Effects of radiation on charge-coupled devices

The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used.

Carnes, J. E.↗
NASA NTRS1972

Radiation sensitivity of silicon imaging sensors on missions to the outer planets.

Review of the results of an investigation of the magnitude of the degradation effects of radiation on the operating characteristics of camera tubes using silicon diode arrays in the space environment, and discussion of the radiation damage mechanisms concerned. The effects produced by bombardment of bare-silicon-diode arrays or vidicon tubes with 85-kV X rays, Cobalt 60 gamma rays, 1 MeV and 11 MeV electrons, 3 MeV and 142 MeV protons, and reactor neutrons are presented. Interference effects produced by radiation bombardment during operation of television tubes are investigated, and limiting fluxes of electrons and protons are given.

Brucker, G. J.↗