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Coronell, Dan

Publications and source records attributed to Coronell, Dan.

Characterization of Showerhead Performance At Low Pressure

The overall objective of this work is to characterize the flow to rough showerheads by deriving pressure drop versus velocity correlations to at can be then used in reactor scale simulations where the showerhead is approximated as a porous medium. At relatively low Reynolds numbers (less than 1-10 based on the hole length scale) and in the absence of slip flow, Darcy's Law, grad P = mu U/k, can be used to express the relation between the pressure drop and velocity where @mu@ is the fluid viscosity and it is the permeability that can be theoretically predicted as k= e R^2 /8, where e is the porosity. However, at sufficiently small hole diameters and decreased pressures (less than 5 Torr), the Knudsen number based on showerhead tube radius increases, and the flow may be in a transition regime. Different expressions have been proposed to account for this effect in the permeability by expressing k as a function of either pressure or Knudsen number. But at even higher Knudsen numbers, the pressure drop - velocity dependence is non-linear, and Darcy's Law no longer holds such that a permeability cannot be defined. The direct simulation Monte Carlo method is used along side conventional CFD techniques to determine the extent to which the CFD technique is appropriate and helps to derive correlations for the more rarefied cases of interest in these showerhead flows.

Hash, David B.↗

Feature Profile Evolution of SiO2 Trenches In Fluorocarbon Plasmas

Etching of silicon microstructures for semiconductor manufacturing in chlorine plasmas has been well characterized. The etching proceeds in a two-part process, where the chlorine neutrals passivate the Si surface and then the ions etch away SiClx. However, etching in more complicated gas mixtures and materials, such as etching of SiO2 in Ar/C4F8, requires knowledge of the ion and neutral distribution functions as a function of angle and velocity, in addition to modeling the gas surface reactions. In order to address these needs, we have developed and integrated a suite of models to simulate the etching process from the plasma reactor level to the feature profile evolution level. This arrangement allows for a better understanding, control, and prediction of the influence of equipment level process parameters on feature profile evolution. We are currently using the HPEM (Hybrid Plasma Equipment Model) and PCMCM (Plasma Chemistry Monte Carlo Model) to generate plasma properties and ion and neutral distribution functions for argon/fluorocarbon discharges in a GEC Reference Cell. These quantities are then input to the feature scale model, Simulation of Profile Evolution by Level Sets (SPELS). A surface chemistry model is used to determine the interaction of the incoming species with the substrate material and simulate the evolution of the trench profile. The impact of change of gas pressure and inductive power on the relative flux of CFx and F to the wafer, the etch and polymerization rates, and feature profiles will be examined. Comparisons to experimental profiles will also be presented.

Hwang, Helen↗