Anisotropic Optical Polarization of AlGaN Based 275 nm Light-Emitting Diodes due to Quantum-Size Effects.
Abstract not provided.
Montano, Ines↗
Engineering topics
Crawford, Mary H
Publications and source records attributed to Crawford, Mary H.
Distribution of Deep Level Defects in InGaN/GaN LEDs and their Dependence on In Alloying.
Abstract not provided.
Armstrong, Andrew.↗
Material and Device Development of AlGaN Based Deep UV Emitters.
Abstract not provided.
Allerman, Andrew A.↗
Deep Level Defect Spectroscopy in Reduced Dimension Semiconductor Materials and Devices.
Abstract not provided.
Armstrong, Andrew.↗
Using Dilute Hydrogen Flows to Tailor Indium Incorporation during InGaN Growth.
Abstract not provided.
Koleske, Daniel↗
Deep Level Defect Spectroscopy in Reduced Dimension Semiconductor Materials and Devices (invited).
Abstract not provided.
Armstrong, Andrew.↗
Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes
Explore the source record for details and available documents.
solar (photovoltaic), solid state lighting, phonon↗
Nano-engineering for Solid-State Lighting Science to Make Solid-State Lighting a Global Reality.
Abstract not provided.
Lopresti, Vincent C.↗
Intersubband Absorption in AlN-AlGaN Superlattices (invited).
Abstract not provided.
Allerman, Andrew A.↗
Exploring the Competing Radiative and Non-Radiative Recombination Processes that Limit the Efficiency of Light-Emitting Materials (invited).
Abstract not provided.
Crawford, Mary H↗
Optical Signatures of Defects in Nitride Semiconductors (invited).
Abstract not provided.
Armstrong, Andrew.↗
Quantitative and Nanoscale MQW Defect Characterization in InGaN/GaN LEDs (invited).
Abstract not provided.
Armstrong, Andrew.↗
Understanding and Controlling Defect Recombination from the Nanoscopic to Macroscopic Scale (invited).
Abstract not provided.
Armstrong, Andrew.↗