Micromachined silicon periodic structures for millimeter- and submillimeter-wave applications
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Cheng, L. J.↗
Engineering topics
Crotty, G. T.
Publications and source records attributed to Crotty, G. T..
Processing and characterization of high-efficiency
Silicon solar cells with efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high efficiency terrestrial solar cells. Preliminary results indicate that the high efficiency cell is more susceptible to radiation damage in that it retains a smaller proportion of its original power output when compared to conventional space cells after exposure to 5 times 10 to the 14th power 1 MeV electrons. However, the cell does maintain a greater overall power output than the conventional cells to which it was compared. Furthermore, this cell does not demonstrate post-electron irradiation photon decay as has been described for cells processed on 1-10 ohm-cm float zone silicon.
Crotty, G. T.↗
A Surface-Controlled Solar Cell
Open-circuit voltage and cell efficiency increased. Proposed technique for controlling recombination velocity on solar-cell surfaces provides cells of increased efficiency and open-circuit voltage. In present cells, uncontrolled surface recombination velocity degrades opencircuit voltage and efficiency. In cell using proposed technique, transparent conducting layer, insulated from cell contacts, biased to enable variable control of surface recombination velocity.
Daud, T.↗
Solar Cels With Reduced Contact Areas
Efficiency of silicon solar cells increased about 20 percent using smaller metal-contact area on silicon at front and back of each cell. Reduction in contact area reduces surface recombination velocity under contact and thus reduces reverse saturation current and increases opencircuit voltage..
Daud, T.↗
Radiation characteristics of low resistivity float zone silicon solar cells
The effects of 1-MeV electron irradiation on silicon solar cells with AM0 efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. These cells do not demonstrate post-electron-irradiation photon decay as has been described for cells processed on 1-10 ohm-cm FZ silicon.
Crotty, G. T.↗
Dot junction solar cells
A design of solar cells with reduced junction area on the cell surface is investigated for reduction of saturation current and increase in open-circuit voltage. Equidiameter dot junctions distributed across the surface of the cell offer an efficient alternative, with variations in dot diameter and in the spacing between dots giving the required variations in the ratio of junction area to total surface area. A simplified analysis for short-circuit current and other cell parameters, which enables cell design optimization, is presented. Experimental solar-cell performance results, as functions of different area ratios, are presented and compared with the model. It is shown that saturation current reduction is possible for achieving efficiencies as high as 18 percent in flat-plate terrestrial applications.
Daud, T.↗
New high-efficiency silicon solar cells
A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.
Daud, T.↗
Fabrication and analysis of dot junction silicon solar cells
A design of solar cells with reduced junction area on the cell surface is investigated for reduction of saturation current and increase in open-circuit voltage. Equidiameter dot junctions distributed across the surface of the cell offer an efficient alternative, with variations in dot diameter and in the spacing between dots giving the required variations in the ratio of junctions area to total surface area. A simplified analysis for short-circuit current and other cell parameters, which enables cell design optimization, is presented. Efficiencies beyond 18 percent are obtainable in flat-plate terrestrial applications. Experimental solar-cell performance results, as functions of different area ratios, and bulk doping are presented. It is shown that saturation current reduction and open-circuit voltage increase is obtained by reduced junction area.
Crotty, G. T.↗
Characterization of grain boundaries in silicon
Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented.
Cheng, L. J.↗
Enhanced diffusion of phosphorus at grain boundaries
Enhanced diffusion of phosphorus at grain boundaries in cast polycrystalline photovoltaic materials (Wacker, HEM, and Semix) was studied. It was found that the enhancements for the three materials were the same, indicating that the properties of boundaries are similar, even though they were grown by different techniques. In addition, it was observed that grain boundaries capable of enhancing the diffusion always have strong recombination activities. Both phenomena could be related to dangling bonds existing at the boundaries. The present study gives the first evidence that incoherent second order twins of 111/115-plane type are diffusion-active.
Cheng, L. J.↗