A Terahertz Grid Frequency Doubler
We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bow-tie antennas as a unit cell each loaded with a planar Schottky diode.
Engineering topics
Publications and source records attributed to Crowe, T. W..
We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bow-tie antennas as a unit cell each loaded with a planar Schottky diode.
The gradual depletion of the Earth's stratospheric ozone and the regular appearance of deep ozone 'hole' over the polar regions has dramatic ramifications for our planet
Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.
The development of GaAs Schottky barrier diodes for frequencies well into the submillimeter wavelength range is discussed. These devices have the highest cutoff frequencies yet obtained for varactor diodes and have produced sufficient output power to drive Schottky mixers at frequencies as high as 640 GHz. The fundamental design tradeoff between cutoff frequency and capacitance modulation is explored. As the doping density is increased and the anode diameter is reduced, the dynamic cutoff frequency increases, reaching a maximum of roughly 5 THz. It is concluded that the maximum output frequency from harmonic multipliers based on standard GaAs varactor diodes will be about 1 THz.