Engineering topics

Culik, J.

Publications and source records attributed to Culik, J..

4 records

NASA NTRS1984

Backside damage-gettering in cast polycrystalline silicon

The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

Culik, J.↗

NASA NTRS1984

Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

Culik, J.↗

NASA NTRS1980

Development of a high efficiency thin silicon solar cell

Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%.

Storti, G.↗

NASA NTRS1980

Pilot line report: Development of a high efficiency thin silicon solar cell

Alternate processing technologies were developed and introduced into the pilot line with a resulting increase in the efficiency of the thin cells. The introduction of an aluminum paste alloy technique for the formation of a back surface field represents a significant advance over previous techniques. The fabrication and results for quantities in excess of 2000 2 cm x 2 cm thin cells and 1000 5 cm x 5 cm thin cells are described. Substantial improvement in performance and yield of the thin cells were obtained. The overall yield of the 2 cm x 2 cm pilot line was better than 38%, while the best lot yield was greater than 51%. The average power density of the 2 cm x 2 cm cells was approximately 16.8 mW/sq cm with an average AMO (at 25 C) efficiency of 12.4%. The lot yield of the 5 cm x 5 cm pilot line improved from only 7% at the beginning of the operation to better than 17% as experience was gained. The average 5 cm x 5 cm thin cell had an AMO efficiency (at 25 C) of 11.5%.

Storti, G.↗