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Curtis, O. L., Jr.

Publications and source records attributed to Curtis, O. L., Jr..

6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Damage coefficients in low resistivity silicon

Electron and proton damage coefficients are determined for low resistivity silicon based on minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. Irradiations were performed on bulk samples and cells fabricated from four types of boron-doped 0.1 ohm-cm silicon ingots, including the four possible combinations of high and low oxygen content and high and low dislocation density. Measurements were also made on higher resistivity boron-doped bulk samples and solar cells. Major observations and conclusions from the investigation are discussed.

Srour, J. R.↗
NASA NTRS1971

Radiation tolerance of aluminum-doped silicon

Data are presented that indicate that heat-treated Czochralski-grown aluminum doped silicon that undergoes an appreciable resistivity increase during heating at approximately 450 C is significantly more resistant to both neutron and gamma irradiation than boron doped material (or aluminum doped material that either has not been heat treated or does not experience an appreciable resistivity change during such a treatment). Data interpretation is, however, quite difficult due to the occurrence of severe trapping effects in heat treated material.

Curtis, O. L., Jr.↗