D'Aiello, Robert Vincent

NASA NTRS1978

Photovoltaic device having an extended PN junction

A photovoltaic device having essentially only a body of semiconductor material having a first region of one conductivity type in contact with a second region of the opposite conductivity type, forming a portion of the device PN junction therebetween. A plurality of pocket regions of the same conductivity type as the first region extend into the second region thereby further defining a portion of the PN junction in the second region.

D'Aiello, Robert Vincent↗

NASA NTRS1978

Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency

A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

Kressel, Henry↗