Engineering topics
Publications and source records attributed to Dakai Chen.
The purpose of this test was to determine the low dose rate total ionizing dose susceptibility of the AD581 precision voltage reference, for the Joint Polar Satellite System (JPSS) Program.
The purpose of this study is to examine the low dose rate total ionizing dose (TID) susceptibility of the SFT2222A NPN bipolar junction transistor (BJT) manufactured by Solid State Devices, Inc. (SSDI).
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
The purpose of this test is to determine the total-ionizing dose (TID) susceptibility of the LTC6268-10 from Linear Technology Corporation.
The purpose of this study was to examine the total ionizing dose susceptibility for the SN54LVC14A manufactured by Texas Instruments, Inc.
The purpose of this test was to determine the heavy ion-induced single-event effect (SEE) susceptibility of the Samsung solid state drive (SSD) containing the Vertical-NAND (VNAND) flash technology. This test was supported by the NASA Electronics Parts and Packaging (NEPP) Program.