Engineering topics

Davis, R. F.

Publications and source records attributed to Davis, R. F..

6 records

NASA NTRS1990

Deep-level dominated electrical characteristics of Au contacts on beta-SiC

Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.

Das, K.↗

NASA NTRS1990

Silicon carbide semiconductor device fabrication and characterization

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

Davis, R. F.↗

NASA NTRS1986

Dry etching of beta-SiC in CF4 and CF4 + O2 mixtures

Dry etching of cubic (100) beta-SiC single-crystal thin films produced via chemical-vapor deposition (CVD) has been performed in CF4 and CF4 + O2 mixtures, in both the reactive-ion-etching (RIE) and plasma-etching modes. The latter process yielded measurable etch rates, but produced a dark surface layer which appears, from the results of secondary-ion mass spectrometry, to be residual SiC. The RIE samples had no residual layer, but Auger electron spectroscopy did reveal a C-rich surface. The optimal RIE conditions were obtained with 10 sccm of pure CF4 at 40 mtorr and a power density of 0.548 W/sq cm, giving an etch rate of 23.3 nm/min. Neither the increase of temperature between 293 and 573 K, nor the incremental addition of O2 to CF4 to 50 percent, produced any strong effect on the etch rates of SiC during RIE. Pictorial evidence of fine line structures produced by RIE of beta-SiC films are also presented.

Palmour, J. W.↗

NASA NTRS1982

Low-Earth orbit satellite servicing economics

Servicing economics of low Earth orbit satellites were studied. The following topics are examined: the economic importance of the repair missions; comparison of mission cost as opposed to satellite modulation transfer functions over a 10 year period; the effect of satellite flight rate change due to changes in satellite failure rate; estimated satellite cost reduction with shuttle operation projects from the 1960's to the 1970's; design objectives of the multimission modular spacecraft; and the economic importance of the repair mission.

Davis, R. F.↗

NASA NTRS1979

Statistical energy analysis response prediction methods for structural systems

The results of an effort to document methods for accomplishing response predictions for commonly encountered aerospace structural configurations is presented. Application of these methods to specified aerospace structure to provide sample analyses is included. An applications manual, with the structural analyses appended as example problems is given. Comparisons of the response predictions with measured data are provided for three of the example problems.

Davis, R. F.↗

NASA NTRS1973

Performance of statistical energy analysis

Statistical energy analysis (SEA) methods have been developed for high frequency modal analyses on random vibration environments. These SEA methods are evaluated by comparing analytical predictions to test results. Simple test methods are developed for establishing SEA parameter values. Techniques are presented, based on the comparison of the predictions with test values, for estimating SEA accuracy as a function of frequency for a general structure.

Davis, R. F.↗