Engineering topics

DeAnna, Russell G.

Publications and source records attributed to DeAnna, Russell G..

5 records

NASA NTRS1999

Modeling of SiC Lateral Resonant Devices Over a Broad Temperature Range

Finite-element analysis (FEA) modal results of 3C-SiC lateral resonant devices anchored to a Si substrate are presented as resonant frequency versus temperature. The suspended elements are etched from a 2 micron, 3C-SiC film grown at 1600 K on a 500 micron-thick, Si substrate. The analysis includes, temperature-dependent properties, shape change due to volume expansion with temperature, and thermal stress caused by differential thermal expansion of different materials. Two designs are considered: type I has anchor locations close to the geometric centroid and a small shuttle; type 11 has a large shuttle with anchors far from the centroid, The resonant frequency decreases approximately 3.5% over a 1000 K temperature increase for the type-I device, and behaves according to theory. The resonant frequency of the type-11 device decreases by 2% over the first 400 K, then rises slightly over the remaining 600 K. This device deviates from theory because of the high thermal stress induced in the beams. The thermal stress is caused by the differential thermal expansion of the suspended element relative to the substrate. The results show that the device geometry must be properly chosen if the resonant frequency of that device will be used to calculate the temperature coefficient of Young's modulus. These results apply only to resonators of one material on a substrate of a different material.

DeAnna, Russell G.↗

NASA NTRS1998

Design, Operation, and Modeling of a Vertical APCVD Reactor for Silicon Carbide Film Growth

An atmospheric pressure chemical vapor deposition (APCVD) reactor utilizing a unique vertical geometry which enables 3C-SiC films to be grown on two, 4-inch diameter Si wafers has been constructed. Contrary to expectations, 3C-SiC films grown in this reactor are thickest at the downstream end of the substrates. To better understand the reason for the thickness distribution on the wafers, an axisymmetric finite-element model of the gas flow in the reactor was constructed. The model uses the ANSYS53 Flowtran package and includes compressible and temperature-dependent fluid properties in laminar or turbulent flow. It does not include reaction chemistry or unsteady flow. The ANSYS53 results predict that the cool, inlet fluid falls through the inlet pipe and the warm, diffuser region like a jet. This jet impinges on top of the susceptor and gets diverted to the reactor side walls, where it flows to the bottom of the reactor, turns, and slowly rises along the face of the susceptor. This may explain why the SiC films are thickest at the downstream side of the wafers, as gas containing fresh reactants first passes over this region. Modeling results are presented for both one atmosphere and one half atmosphere reactor pressure.

DeAnna, Russell G.↗

NASA NTRS1998

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

DeAnna, Russell G.↗

NASA NTRS1997

Microfabricated Ice-Detection Sensor

Knowledge of ice conditions on important aircraft lift and control surfaces is critical for safe operation. These conditions can be determined with conventional ice-detection sensors, but these sensors are often expensive, require elaborate installation procedures, and interrupt the airflow. A micromachined, silicon-based, flush-mounted sensor which generates no internal heat has been designed, batch fabricated, packaged, and tested. The sensor is capable of distinguishing between an ice-covered and a clean surface. It employs a bulk micromachined wafer with a 7 micrometer-thick, boron-doped, silicon diaphragm which serves as one plate of a parallel-plate capacitor. This is bonded to a second silicon wafer which contains the fixed electrodes, one to drive the diaphragm by application of a voltage, the other to measure the deflection by a change in capacitance. The diaphragm sizes ranged from 1x1 mm to 3x3 mm, and the gap between parallel-plate capacitors is 2 micrometers. A 200 V d.c. was applied to the driving electrode which caused the capacitance to increase approximately 0.6pf, from a nominal capacitance of 0.6pf, when the surface was ice free. After the sensor was cooled below the freezing point of water, the same voltage range was applied to the drive electrode. The capacitance increased by the same amount. Then a drop of water was placed over the diaphragm and allowed to freeze. This created an approximately 2mm-thick ice layer. The applied 200V d.c. produced no change in capacitance, confirming that the diaphragm was locked to the ice layer. Since the sensor uses capacitive actuation, it uses very little power and is an ideal candidate for inclusion in a wireless sensing system.

DeAnna, Russell G.↗

NASA NTRS1996

Microelectromechanical Systems for Aerodynamics Applications

Microelectromechanical systems (MEMS) embody the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including micro-sensors and micro-actuators, are attractive because they can be made small (characteristic dimension about microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. MEMS pressure sensors, wall-shear-stress sensors, and micromachined hot-wires are nearing application in aeronautics. MEMS actuators face a tougher challenge since they have to be scaled (up) to the physical phenomena that are being controlled. MEMS actuators are proposed, for example, for controlling the small structures in a turbulent boundary layer, for aircraft control, for cooling, and for mixing enhancement. Data acquisition or control logistics require integration of electronics along with the transducer elements with appropriate consideration of analog-to-digital conversion, multiplexing, and telemetry. Altogether, MEMS technology offers exciting opportunities for aerodynamics applications both in wind tunnels and in flight

Mehregany, Mehran↗