Development of low-noise ultraviolet detectors based on Group-III nitrides
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UV detectors Group-III nitrides↗
Engineering topics
Deelman, P. W.
Publications and source records attributed to Deelman, P. W..
Low-noise, low-dark-current GaN diodes for UV detectors
We report mesa-isolated Schottky barrier photodetectors fabricated on n-GaN. Single-element detectors were constructed from nitride epilayers grown by gas source molecular beam epitaxy (GSMBE) on Si(111).
ultraviolet↗
Ultrastable and uniform EUV and UV detectors
In this paper we will discuss the performance of delta-doped CCDs in UV and EUV, our in-house thinning capability, bonding approaches for producing flat focal plane arrays, and in-house capabilities of directly applied antireflection coatings.
EUV↗
Delta-doped imagers for UV and EUV applications
In this paper we will discuss performance of delta-doped CCDs in UV and EUV, our in-house thinning capability, bonding approaches for producing flat focal plane arrays, and in-house capabilities of directly applied antireflection coatings.
UV EUV delta-doped imagers↗
Delta-doped imagers for UV and EUV applications
Explore the source record for details and available documents.
delta-doped imagers UV EUV↗