Engineering topics
DelaCruz, Steven
Publications and source records attributed to DelaCruz, Steven.
In situ formation of metal–organic framework derived CuO polyhedrons on carbon cloth for highly sensitive non-enzymatic glucose sensing
A facile in situ synthetic strategy to construct MOF-derived porous CuO polyhedrons on carbon cloth for highly sensitive non-enzymatic glucose sensing.
W/TaC/SiC sandwich stack for high temperature applications
High-temperature stability of the tungsten/tantalum carbide/silicon carbide (W/TaC/SiC) system was examined and compared to the tungsten/silicon carbide (W/SiC) system. Interfacial reactions, surface morphology, and roughness evolutions on thermal annealing at 1000 °C were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). For the W/SiC system, WC, W 2 C and W 5 Si 3 phases were observed due to severe chemical reaction after 24 h annealing, which led to an inhomogeneous surface structure with several large craters and small pores, thereby increasing surface roughness greatly. On the other hand, there was no tungsten silicide and/or carbide formation upon annealing with a TaC diffusion barrier. The surface structure remained nearly unchanged, and small changes in surface roughness with annealing time, which could be due to the growth of W grains, were noted. Furthermore, both the as-deposited and the 24 h annealed W/TaC/SiC samples presented an excellent interfacial bonding with a dense uniform interface. The results indicate that TaC is a promising diffusion barrier in the W/SiC system for high temperature applications.
Surface functionalization of carbon cloth with cobalt-porphyrin-based metal organic framework for enhanced electrochemical sensing
Not Available
Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC
The combination of W and SiC has many applications such as a hot cell of a thermionic energy converter, nuclear material, and high temperature microelectronics. In this study, a 2 µm thick TiN film is introduced as a diffusion barrier between SiC and W to avoid the inter-diffusion reaction at high temperature. Additionally, the effect of annealing temperature on the surface morphology and microstructure of the TiN film is studied to explore its high temperature stability. Then 500 nm W film is sputtered on the TiN film to characterize the inter-diffusion and stability of the W/TiN/SiC multilayer at 1100°C by XRD, Raman spectroscopy and cross-sectional EDS mapping techniques. The results indicate that the W/TiN/SiC multilayer is very stable even when heated at 1100°C for 25 hours.