Engineering topics

Delker, Collin J.

Publications and source records attributed to Delker, Collin J..

4 records

DOE OSTI2021

Evaluation of Guardbanding Methods for Calibration and Product Acceptance

The Primary Standards Lab employs guardbanding methods to reduce risk of false acceptance in calibration when test uncertainty ratios are low. Similarly, production agencies guardband their requirements to reduce false accept rates in product acceptance. The root-sum-square guardbanding method is recommended by PSL, but many other guardbanding methods have been proposed in literature or implemented in commercial software. This report analyzes the false accept and reject rates resulting from the most common guardbanding methods. It is shown that the root-sum-square method and the Dobbert Managed Guardband strategy are similar and both are suitable for calibration and product acceptance work in the NSE.

42 ENGINEERING↗

DOE OSTI2020

Experimental and modeling study of 1/ f noise in multilayer MoS2 and MoSe2 field-effect transistors

In field-effect transistors (FETs) with two-dimensional (2D) transition metal dichalcogenide channels, the dependence of field-effect mobility on atomic layer thickness has been studied and interpreted in terms of interface scattering and interlayer coupling resistance (Rint). However, a model for 1/f noise, such as in MoS2 and in MoSe2 FETs, for various contact metals and layer number thicknesses has not been reported. In this work, we have experimentally studied current–voltage and 1/f noise on MoS2 and MoSe2 FETs with source and drain contacts of high and low work function metals to understand both the mobility and the noise behavior. We have developed a noise model incorporating layer number dependent Hooge parameters and Rint. The noise and mobility models utilize screening lengths for charge, mobility, and Hooge parameter to describe the variation of these quantities with a layer number. Using our single model topology with appropriate fitting parameters for each material and each contact metal, the model captures the experimentally observed layer thickness dependence of the Hooge parameter. Our noise analysis is fully comprehensive and, hence, could be applied to any 2D layered systems.

Kwon, Jiseok↗

DOE OSTI2020

Calculating Interval Uncertainties for Calibration Standards That Drift with Time

Calibrated values of many devices exhibit predictable drift over time. To provide an uncertainty statement valid over the entire calibration interval, one must account for drift. In this article, a method of accounting for drift is proposed based on guidance in the Guide to Expression of Uncertainty in Measurement. An additional uncertainty term is computed using a linear regression of historical measurement data, which is included along with the time-of-test uncertainty. This method is evaluated by analyzing its average out-of-tolerance (OOT) rate using a Monte Carlo simulation, which results in the desired 5% average OOT rate when the total uncertainty is expanded to a 95% confidence interval.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

MoS 2 has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS 2 field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS 2 Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS 2 provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS 2 transistors with prior studies using other contact metals.

Kwon, Jiseok↗