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Dhale, Nikhil

Publications and source records attributed to Dhale, Nikhil.

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Quantum transport response of topological hinge modes

Electronic topological phases are typified by the conducting surface states that exist on the boundary of an insulating three-dimensional bulk. While the transport response of the two-dimensional surface states has been studied, the quantum response of the one-dimensional hinge modes has not been demonstrated. Here we provide evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps in the intrinsic topological insulator α-Bi 4 Br 4 . Our magnetoresistance measurements reveal pronounced Aharonov–Bohm oscillations that are periodic in h/e (where h denotes Planck’s constant and e is the electron charge). The observed periodicity evinces quantum interference of electrons circumnavigating around the hinges. We also demonstrate that the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry. Furthermore, our findings reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can eventually be applied to the development of efficient topological electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Ideal weak topological insulator and protected helical saddle points

Here we report the design and observation of an ideal weak topological insulator in a quasi-one-dimensional bismuth halide, Bi 4 I 1.2 Br 2.8 . Via angle-resolved photoemission spectroscopy, we identify that Bi 4 I 1.2 Br 2.8 hosts topological surface states on the (100)′ side surface in the form of two anisotropic π-offset Dirac cones while topologically dark on the (001) top surface. The results fully determine a unique side-surface Hamiltonian and thereby identify two pairs of nondegenerate helical saddle points. The fact that both the surface Dirac and helical saddle points are in the global bulk band gap of 195 meV suggests the potential of this system to be a fertile ground for topological many-body physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors

Bi 4 I 4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi 4 I 4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi 4 I 4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Canted antiferromagnetism in the quasi-one-dimensional iron chalcogenide BaFe 2 Se 4

We report the synthesis and physical properties studies of quasi-one-dimensional (quais-1D) iron chalcogenide BaFe 2 Se 4 which shares the FeSe 4 tetrahedra building motif commonly seen in the iron chalcogenide superconductors. A high-quality polycrystalline sample was achieved by solid-state reaction method and characterized by x-ray diffraction, electrical resistivity, magnetic susceptibility, and neutron diffraction measurements. BaFe 2 Se 4 is a narrow gap semiconductor that magnetically orders at ~310 K. Therefore, both neutron powder diffraction results and isothermal M-H loops suggest a canted antiferromagnetic structure where Fe sublattices are antiferromagnetically ordered along the c-axis quasi-1D chain direction, resulting in a net ferromagnetic moment in the perpendicular direction along the a axis with tilted angle of 18.7° towards the b axis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗