Engineering topics

Dhuey, Scott D.

Publications and source records attributed to Dhuey, Scott D..

3 records

DOE OSTI2022

Density fluctuations, homeostasis, and reproduction effects in bacteria

Abstract Single-cells grow by increasing their biomass and size. Here, we report that while mass and size accumulation rates of single Escherichia coli cells are exponential, their density and, thus, the levels of macromolecular crowding fluctuate during growth. As such, the average rates of mass and size accumulation of a single cell are generally not the same, but rather cells differentiate into increasing one rate with respect to the other. This differentiation yields a density homeostasis mechanism that we support mathematically. Further, we observe that density fluctuations can affect the reproduction rates of single cells, suggesting a link between the levels of macromolecular crowding with metabolism and overall population fitness. We detail our experimental approach and the “invisible” microfluidic arrays that enabled increased precision and throughput. Infections and natural communities start from a few cells, thus, emphasizing the significance of density-fluctuations when taking non-genetic variability into consideration.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2019

Temperature and oxygen concentration effects on anisotropy in chromium hard mask etching for nanoscale fabrication

Chromium and its oxides are valuable as functional materials and plasma-etching hard masks in micro- and nanofabrication. While the continuous decrease in feature sizes opens new opportunities for applications of patterned chromium, the demands placed on the patterning process require a new level of mechanistic understanding. In this work, we investigate plasma etching with chlorine/oxygen chemistry using temperature and oxygen concentration as a means to controllably pattern chromium at the nanometer level. Building on our previous studies on blanket film chromium etching, we look here at patterned trenches 15–100 nm wide in 20 and 10 nm thick chromium films. We vary oxygen concentrations from 1.5% to 81% at substrate temperatures of +20 and −50 °C, respectively. Feature and trench profiles are evaluated from high-resolution cross-sectional SEM images. The ternary chromium etch product shows very different profiles as oxygen, temperature, and feature size are varied. We find the highest anisotropy at −50 °C and 50% oxygen concentration. Etch results suggest that the redeposition of nonvolatile intermediate reaction compounds enhances anisotropy at low temperature, whereas re-emission of reactive species causes undercut at the higher etching temperature.

Staaks, Daniel (ORCID:0000000204825507)↗

DOE OSTI2019

Reconstructing the three-dimensional latent image of extreme ultraviolet resists with resonant soft x-ray scattering

© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE). Extreme ultraviolet (EUV) lithography is one of the most promising printing techniques for high-volume semiconductor manufacturing at the 14-nm half-pitch device node and beyond. However, key challenges around EUV photoresist materials, such as the exposure-dose sensitivity or the line-width roughness, continue to impede its full adoption into industrial nanofab facilities. Metrology tools are required to address these challenges by helping to assess the impact of the EUV materials' properties and processing conditions along different steps of the nanofabrication process. We apply the resonant soft x-ray scattering (RSoXS) technique to gain insights into the structure of patterned EUV resists before the development step takes place. By using energies around the carbon K-edge to take advantage of small differences in chemistry, the electronic density contrast between the exposed and unexposed regions of the resists could be enhanced in order to image the patterns with subnanometer precision. Critical-dimension grazing-incidence small-angle x-ray scattering is then performed at energies where the contrast is maximized, enabling the reconstruction of the three-dimensional shape of the latent image. We demonstrate the potential of RSoXS to provide a high-resolution height-sensitive profile of patterned EUV resists, which will help in quantifying the evolution of critical features, such as the line-edge roughness, at a key step of the nanofabrication process.

Freychet, Guillaume↗