Vertical GaN Power Electronics - Opportunities and Challenges (invited).
Abstract not provided.
Kaplar, Robert↗
Engineering topics
Dickerson, Jeramy Ray
Publications and source records attributed to Dickerson, Jeramy Ray.
Dependence of Critical Electric Field on Semiconductor Bandgap - An Analytical Study.
Abstract not provided.
Hollis, Mark↗
Panel Discussion ? Ultra-Wide Bandgap Materials Devices and Systems.
Abstract not provided.
Kaplar, Robert↗
Investigating Heavy Ion Effects on 14nm-Process FinFETs: Displacement Damage Versus Total Ionizing Dose.
Abstract not provided.
Esposito, Madeline G.↗
Reliability Studies of Wide-Bandgap Power Semiconductor Devices Under Realistic Stress Conditions.
Abstract not provided.
Kaplar, Robert↗
Limitations in Impact Ionization Modeling for Predicting Breakdown in Wide Bandgap Power Semiconductors.
Abstract not provided.
Binder, Andrew↗
Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs.
Abstract not provided.
Yates, Luke↗
Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes.
Abstract not provided.
Dickerson, Jeramy Ray↗
Heavy Ion Displacement Damage Effects in 14nm-Process FinFETs.
Abstract not provided.
Esposito, Madeline G.↗
Ultra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications.
Abstract not provided.
Reza, Shahed↗