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Diercks, David (ORCID:0000000251380168)

Publications and source records attributed to Diercks, David (ORCID:0000000251380168).

3 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Redesigning protonic ceramic electrochemical cells to lower the operating temperature

Protonic ceramic electrochemical cells (PCECs) can operate at intermediate temperatures (450° to 600°C) for power generation and hydrogen production. However, the operating temperature is still too high to revolutionize ceramic electrochemical cell technology. Lowering the operating temperature to <450°C will enable a wider material choice and reduce system costs. We present approaches to redesigning PCECs via readily fabricated single-grain–thick, chemically homogeneous, and robust electrolytes and a nano-micro positive electrode. At 450°C, the PCECs achieve a peak power density of 1.6 watt per square centimeter on H 2 fuel, 0.5 watt per square centimeter on NH 3 fuel, and 0.3 watt per square centimeter on CH 4 fuel in fuel cell mode. In steam electrolysis mode, a current density of >0.6 ampere per square centimeter with a Faradaic efficiency of >90% is achievable at 1.4 volt and 400°C. In addition, exceptional durability (>2000 hours) has been demonstrated, with a degradation rate of <0.01 millivolt per 100 hours in fuel cell mode at 400°C.

Science & Technology - Other Topics↗
DOE OSTI2024

Improving luminescence response in ZnGeN 2 /GaN superlattices: defect reduction through composition control

Abstract Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the Green Gap. ZnGeN 2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN 2 /GaN hybrid structures are theorized to emit green (~530 nn) light with a spontaneous emission rate 4.6–4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN 2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN 2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN 2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗