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Dodds, Nathaniel Anson

Publications and source records attributed to Dodds, Nathaniel Anson.

7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.

42 ENGINEERING↗
DOE OSTI2020

Annual LDRD Report (FY2019)

The performance of Nuclear Deterrence (ND) systems could be improved by adopting advanced commercial CMOS technologies. However, the radiation hardness of these ND systems must be assured. This project quantified dose rate upset thresholds, allowing us to evaluate whether advanced commercial technologies can be used in rad hard applications. This project also evaluated the susceptibility of advanced commercial technologies to neutron displacement damage and single event effects, and developed hardness assurance methods. As a result of this work, Sandia is now collaborating more closely with DoD agencies and their contractors to understand and improve the radiation hardness of advanced commercial technologies. Sandia Capabilities (SPHINX, lon Beam Lab, FPGA test capabilities) were developed and are being utilized by other programs. Staff were trained to do radiation survivability testing and developed proposals that were funded. Internal and external collaborations and partnerships were developed, including with Georgia Tech. This project received the Best Paper award at the 2019 Hardened Electronics And Radiation Technology (HEART) Conference.

36 MATERIALS SCIENCE↗