Engineering topics

Dong, Bozhang

Publications and source records attributed to Dong, Bozhang.

3 records

DOE OSTI2024

Linewidth narrowing in self-injection locked lasers: Effects of quantum confinement

This paper explores the impact of gain medium on linewidth narrowing in integrated self-injection locked III–V/SiN lasers, theoretically and experimentally. We focus on the effects of carrier densities of states in zero- and two-dimensional structures due to quantum-dot and quantum-well confinement. The theoretical approach includes (a) multimode laser interaction to treat mode competition and wave mixing, (b) quantum-optical contributions from spontaneous emission, and (c) composite laser/free-space eigenmodes to describe outcoupling and coupling among components within an extended cavity. For single-cavity lasers, such as distributed feedback lasers, the model reproduces the experimentally observed better linewidth performance of quantum-dot active regions over quantum-well ones. When applied to integrated III–V/SiN lasers, our analysis indicates Hz-level linewidth performance for both quantum-dot and quantum-well gain media due to overcoming the difference in carrier-induced refractive index by incorporating a high-Q SiN passive resonator. Trade-offs are also explored between linewidth, output power, and threshold current.

Cavity quantum electrodynamics↗

DOE OSTI2024

Turnkey locking of quantum-dot lasers directly grown on Si

Ultralow-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce the system size, weight, power consumption and cost. Semiconductor lasers based on self-injection locking have achieved fibre laser coherence, but typically require a high-quality-factor external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking are a low-cost and turnkey operation option, but their coherence is generally inferior to self-injection locking lasers. In this work, we demonstrate quantum-dot lasers grown directly on Si that achieve self-injection-locking laser coherence under turnkey external-cavity locking. The high-performance quantum-dot laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the chaos-free nature of the quantum-dot laser enables a 16 Hz Lorentzian linewidth under external-cavity locking using a low-quality-factor external cavity, and improves the frequency noise by an additional order of magnitude compared with conventional quantum-well lasers.

Dong, Bozhang↗

DOE OSTI2020

Physics and applications of quantum dot lasers for silicon photonics

Abstract Photonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, and metrology. One of the biggest challenges in scaling PICs comes from the parasitic reflections that feed light back into the laser source. These reflections increase noise and may cause laser destabilization. To avoid parasitic reflections, expensive and bulky optical isolators have been placed between the laser and the rest of the PIC leading to large increases in device footprint for on-chip integration schemes and significant increases in packaging complexity and cost for lasers co-packaged with passive PICs. This review article reports new findings on epitaxial quantum dot lasers on silicon and studies both theoretically and experimentally the connection between the material properties and the ultra-low reflection sensitivity that is achieved. Our results show that such quantum dot lasers on silicon exhibit much lower linewidth enhancement factors than any quantum well lasers. Together with the large damping factor, we show that the quantum dot gain medium is fundamentally dependent on dot uniformity, but through careful optimization, even epitaxial lasers on silicon can operate without an optical isolator, which is of paramount importance for the future high-speed silicon photonic systems.

36 MATERIALS SCIENCE↗