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Dongare, Avinash

Publications and source records attributed to Dongare, Avinash.

4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

AMES: MS and MENG in Advanced Manufacturing for Energy at the University of Connecticut (Final Technical Report)

The objective of the project is to develop and implement an advanced degree program (MS and MENG in Advanced Manufacturing for Energy Systems, AMES) responding to the long-term workforce and technology requirements of the nation’s advanced energy products manufacturing industry. The program provided an industry relevant research experience by leveraging existing energy (e.g. fuels, power electronics, electrochemical power sources) and advanced manufacturing (e.g. additive manufacturing, composites, sensing) research at UConn funded by federal and state agencies, and industry, as well as through our industry partnerships. The trainees have joined research teams, advised by faculty with relevant research interests and expertise and were co-advised by industrial mentors. The AMES program have developed a truly interdisciplinary curriculum, first graduate degree program at UConn School (now College) of Engineering not housed in an academic department, with concentrations focusing on various challenges in advanced manufacturing for energy systems, e.g. advanced materials and processing. The project also developed new courses focusing on common technical and professional skills, and integrated various components for an industry relevant training. The program has admitted 29 Master of Science (MS) students since inception in January 2019. Twenty six of these students were AMES fellows, who have received partial funding from DoE through this project. The program far exceeded the goal of admitting at least five new MS (with thesis) students. All students were required to complete a thesis (M.S.) or a capstone (M.Eng.) project that are defined in collaboration with industry partners to ensure industrial relevancy, addressing a current industrial challenges. Industrial mentors also participated in advising the students in their research. AMES fellows, in addition were also required to complete an industrial internship for further industrial experience.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification

Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Damage initiation and evolution in Al-Si layered microstructures under shock loading conditions at atomic scales

Designing materials with microstructural features like multiphase interfaces have shown significant promise for usage in the next generation defense and nuclear applications. The dynamic response of these interfaces in extreme environments is observed to vary with the deformability of individual phases, which could subsequently alter the favored damage nucleation sites related to spall failure. Here, we investigate the role of spacing of interfaces in a nanocrystalline layered Aluminum-Silicon system on the shock wave propagation behavior, and microstructural and defect evolution using classical molecular dynamics simulations. The simulations are carried out with different hypothetical Al/Si microstructures including variations in the distribution of Si grains as layers in a nanocrystalline Al matrix. The molecular dynamics simulations suggest that spall failure is preferentially initiated at Al/Si interfaces. In addition, for the same system volume and same concentration of Si, a higher number of layers is marked by an increase in shock wave velocity and reduced resistance to spall failure.

36 MATERIALS SCIENCE↗