Engineering topics

Donlon, Kevan

Publications and source records attributed to Donlon, Kevan.

5 records

DOE OSTI2026

X-ray Response of the Fully-Depleted, p-Channel SiSeRO-CCD

We present an X-ray characterization of a fully depleted, 725 $μ$m thick p-channel SiSeRO CCD. Measurements with a $^{55}$Fe source yield an energy resolution of $54 \pm 0.9$ eV ($14.6 \pm 0.25 e^{-}$) at 5.9 keV for single-pixel events, demonstrating that the SiSeRO amplifier preserves the intrinsic charge resolution of the CCD under multi-sample non-destructive readout. Characterization with a $^{241}$Am source extends the response to higher-energy photons, with reconstructed spectral features observed between 9-26 keV and the 59.5 keV $γ$ emission. These measurements, together with a muon-derived diffusion calibration, show that charge transport and diffusion are consistent with interactions spanning the full sensor depth. These results demonstrate that the SiSeRO CCD simultaneously achieves sub-electron noise performance and efficient charge collection in a thick, fully depleted silicon detector. This combination enables X-ray spectroscopy across a broad energy range while maintaining sensitivity to faint signals.

Cuevas-Zepeda, Julian↗

DOE OSTI2023

Achieving Single-Electron Sensitivity at Enhanced Speed in Fully-Depleted CCDs with Double-Gate MOSFETs

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer efficiency. The junction coupling between the CCD and MOSFET channels has enabled high sensitivity, demonstrating sub-electron readout noise in one pixel charge measurement. We have also demonstrated the non-destructive readout capability of the device. Achieving single-electron and single-photon per pixel counting in the entire CCD pixel array has been made possible through the averaging of a small number of samples. We have demonstrated fully-depleted CCD readout with better performance than the floating diffusion and floating gate amplifiers available today, in both single and multisampling regimes, boasting at least six times the speed of floating gate amplifiers.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2023

Improved noise performance from the next-generation buried-channel p-MOSFET SiSeROs

The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. In our earlier work, we characterized a number of first prototype SiSeROs with the MOSFET transistor channels at the surface layer. An equivalent noise charge (ENC) of around 15 electrons root mean square (RMS) was obtained. In this work, we examine the first buried-channel SiSeRO. Here we have achieved substantially improved noise performance of around 4.5 electrons root mean square (RMS) and a full width half maximum (FWHM) energy resolution of 132 eV at 5.9 keV, for a readout speed of 625 kpixel/s. We also discuss how digital filtering techniques can be used to further improve the SiSeRO noise performance. Additional measurements and device simulations will be essential to further mature the SiSeRO technology. This new device class presents an exciting new technology for the next-generation astronomical X-ray telescopes requiring fast, low-noise, radiation-hard megapixel imagers with moderate spectroscopic resolution.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2022

High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. Furthermore, we detect the state of a trapped Sr + ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450 μs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS2022

A Direct Detection LiDAR Detector for the Europa Lander Concept

NASA's Jet Propulsion Laboratory is developing a Europa Lander astrobiology mission concept to search for biosignatures within Europa’s subsurface. However, Europa’s rugged terrain presents a number of physical hazards for landing. MIT Lincoln Laboratory is designing a radiation-hardened real-time direct-detection LIDAR system at 532nm to aid with autonomous hazard avoidance and landing site selection for this Europa Lander concept. The detector for this system is a 2048x32 array of silicon Geiger-mode APDs and covers the required field-of-view in one dimension, removing the need for 2D stitching and enabling real-time data processing. Detector design, improvements for radiation tolerance and component characterization results are presented.

San Martin, Alejandro Miguel↗