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Donnelly, Vincent M. (ORCID:0000000158346678)

Publications and source records attributed to Donnelly, Vincent M. (ORCID:0000000158346678).

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗

Numerical simulation of an atmospheric pressure plasma jet with coaxial shielding gas

A two-dimensional ( r, z ) numerical simulation of the discharge characteristics of an atmospheric pressure plasma jet (APPJ), with coaxial shielding gas, was performed. The helium working gas flowed in a central capillary tube, engulfing a needle electrode powered by 13.7 MHz radio frequency sinusoidal voltage. The N 2 shielding gas flowed in the annular space of a coaxial tube. These gases emerged, in laminar flow, in a 78%N 2 -21%O 2 -1%Ar dry air ambient. The characteristics of the APPJ with shielding gas were compared to those of the APPJ without shielding gas. The nitrogen shielding gas hindered the diffusion of oxygen and argon from the ambient air into the helium jet. With the shielding gas present, more nitrogen penetrated into the helium core, causing a shorter plasma ‘plume’. The flow rates of the working and shielding gas, critically affected the gas temperature, and in turn the discharge characteristics. For a He flow of 2 standard liters per minute (slm), switching on the nitrogen shielding gas flow (at 4.5 slm) reduced the on-axis O 2 and Ar mole fractions from 3.9 × 10 - 4 to 6.8 × 10 - 5 and from 1.9 × 10 - 5 to 3.3 × 10 - 6 , respectively, at an axial distance of 3 mm downstream of the nozzle. The radial profiles of the mole fractions of the ambient gases were monotonically and strongly decreasing towards the system axis, for short axial distances from the nozzle (~1 mm), but became progressively flatter at longer distances from the nozzle (3 mm and 5 mm). Simulation predictions captured the salient features of experimental data of ambient species mole fractions in the plasma jet, and the 706 nm optical emission intensity profiles of the He 3 3 S excited state.

Physics↗